[HTML][HTML] Optimization of structure and electrical characteristics for four-layer vertically-stacked horizontal gate-all-around Si nanosheets devices
Q Zhang, J Gu, R Xu, L Cao, J Li, Z Wu, G Wang, J Yao… - Nanomaterials, 2021 - mdpi.com
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.
Q Zhang, J Gu, R Xu, L Cao, J Li, Z Wu… - Nanomaterials …, 2021 - search.ebscohost.com
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices
Q Zhang, J Gu, R Xu, L Cao, J Li… - Nanomaterials …, 2021 - pubmed.ncbi.nlm.nih.gov
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
[PDF][PDF] Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices
Q Zhang, J Gu, R Xu, L Cao, J Li, Z Wu… - IEEE Trans. Electron …, 2019 - researchgate.net
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
[PDF][PDF] Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices. Nanomaterials …
Q Zhang, J Gu, R Xu, L Cao, J Li, Z Wu, G Wang, J Yao… - 2021 - pdfs.semanticscholar.org
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
[HTML][HTML] Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices
Q Zhang, J Gu, R Xu, L Cao, J Li, Z Wu, G Wang… - …, 2021 - ncbi.nlm.nih.gov
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.
Q Zhang, J Gu, R Xu, L Cao, J Li, Z Wu… - Nanomaterials (Basel …, 2021 - europepmc.org
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.
Q Zhang, J Gu, R Xu, L Cao, J Li, Z Wu… - Nanomaterials (Basel …, 2021 - europepmc.org
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …
nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release …