Total-Ionizing-Dose Effects, Low-Frequency Noise, and Random Telegraph Noise of MOSFETs with Advanced Architectures
M Gorchichko - 2021 - ir.vanderbilt.edu
In this dissertation, the basic mechanisms of total-ionizing-dose (TID) responses of Gate-All-
Around (GAA) FETs and Charge-Trap Transistors (CTT) with FinFET architecture are …
Around (GAA) FETs and Charge-Trap Transistors (CTT) with FinFET architecture are …
Total-ionizing-dose response of highly scaled gate-all-around Si nanowire CMOS transistors
Gate-all-around (GAA) silicon nanowire (NW) CMOS transistors demonstrate outstanding
total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced …
total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced …
Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics
M Gorchichko, Y Cao, EX Zhang, D Yan… - … on Nuclear Science, 2019 - ieeexplore.ieee.org
Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in 30-nm gate-
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …
length bulk and silicon-on-insulator (SOI) FinFETs for devices with fin widths of 10-40 nm …
TID effects in highly scaled gate-all-around Si nanowire CMOS transistors irradiated to ultrahigh doses
Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA)
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
Impacts of through-silicon vias on total-ionizing-dose effects and low-frequency noise in FinFETs
Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in advanced bulk
nMOS and pMOS FinFETs with SiO 2/HfO 2 gate dielectrics. Otherwise identical devices …
nMOS and pMOS FinFETs with SiO 2/HfO 2 gate dielectrics. Otherwise identical devices …
Laser-Induced Single-Event Effects, Total-Ionizing-Dose Effects, and Low-Frequency Noise in Advanced FinFets
K Li - 2022 - search.proquest.com
In this dissertation, radiation effects and low-frequency noise are studied in advanced
FinFETs. Firstly, we evaluate the single-event effects on devices with the promising InGaAs …
FinFETs. Firstly, we evaluate the single-event effects on devices with the promising InGaAs …
Ionizing-radiation response and low-frequency noise of 28-nm MOSFETs at ultrahigh doses
Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and
low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad …
low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad …
Total ionizing dose responses of 22-nm FDSOI and 14-nm bulk FinFET charge-trap transistors
RM Brewer, EX Zhang, M Gorchichko… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
Total-ionizing-dose (TID) effects are investigated for 22-nm fully-depleted silicon-on-
insulator (FDSOI) and 14-nm bulk FinFET charge-trap memory transistors. Electron trapping …
insulator (FDSOI) and 14-nm bulk FinFET charge-trap memory transistors. Electron trapping …
Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
S Bonaldo, T Wallance, H Barnaby… - … on Nuclear Science, 2023 - ieeexplore.ieee.org
We provide comprehensive experimental data and technology computer-aided design
(TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n …
(TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n …
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments
S Bonaldo, T Ma, S Mattiazzo, A Baschirotto… - Nuclear Instruments and …, 2022 - Elsevier
Abstract Total-ionizing-dose (TID) mechanisms are evaluated in 16 nm Si bulk FinFETs at
doses up to 1 Grad (SiO 2) for applications in high-energy physics experiments. The TID …
doses up to 1 Grad (SiO 2) for applications in high-energy physics experiments. The TID …