Total-ionizing-dose response of highly scaled gate-all-around Si nanowire CMOS transistors
Gate-all-around (GAA) silicon nanowire (NW) CMOS transistors demonstrate outstanding
total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced …
total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced …
TID effects in highly scaled gate-all-around Si nanowire CMOS transistors irradiated to ultrahigh doses
Total-ionizing-dose (TID) effects are investigated in a highly-scaled gate-all-around (GAA)
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
FET technology using Si nanowire channels with a diameter of 8 nm. n-and p-FETs are …
Total ionizing dose (TID) effects in extremely scaled ultra-thin channel nanowire (NW) gate-all-around (GAA) InGaAs MOSFETs
InGaAs nanowire (NW) gate-all-around (GAA) MOSFETs exhibit superior radiation hardness
compared to planar devices and FinFETs, benefitting from reduced gate-oxide electric fields …
compared to planar devices and FinFETs, benefitting from reduced gate-oxide electric fields …
Total ionizing dose response of multiple-gate nanowire field effect transistors
M Gaillardin, C Marcandella, M Martinez… - … on Nuclear Science, 2017 - ieeexplore.ieee.org
This paper investigates the total ionizing dose (TID) response of nanoscaled field-effect
transistors (FET) made of silicon multiple-gate nanowire (NW). The NWFET architecture …
transistors (FET) made of silicon multiple-gate nanowire (NW). The NWFET architecture …
Intrinsic tolerance to total ionizing dose radiation in gate-all-around MOSFETs
ES Comfort, MP Rodgers, W Allen… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
We measured the total ionizing dose response of gate-all-around silicon nanowire n-and
pMOSFETs to x-ray doses up to 2Mrad (SiO 2). We show that they are radiation hard, with no …
pMOSFETs to x-ray doses up to 2Mrad (SiO 2). We show that they are radiation hard, with no …
Investigations on the geometry effects and bias configuration on the TID response of nMOS SOI tri-gate nanowire field-effect transistors
J Riffaud, M Gaillardin, C Marcandella… - … on Nuclear Science, 2017 - ieeexplore.ieee.org
This paper investigates the total ionizing dose (TID) sensitivity of nanowire (NW) field-effect
transistors (NWFETs). Both X-ray irradiations and self-consistent calculations of charge …
transistors (NWFETs). Both X-ray irradiations and self-consistent calculations of charge …
TID response of nanowire field-effect transistors: Impact of the back-gate bias
J Riffaud, M Gaillardin, C Marcandella… - … on Nuclear Science, 2020 - ieeexplore.ieee.org
The impact of back-gate bias on the total ionizing dose (TID) response of silicon-on-insulator
(SOI) nanowire field-effect transistors (NWFETs) is investigated. The voltage shift induced by …
(SOI) nanowire field-effect transistors (NWFETs) is investigated. The voltage shift induced by …
The enhanced role of shallow-trench isolation in ionizing radiation damage of 65 nm RF-CMOS on SOI
A Madan, R Verma, R Arora, EP Wilcox… - … on Nuclear Science, 2009 - ieeexplore.ieee.org
The mechanism for ionizing radiation damage in multi-finger SOI CMOS devices is
presented for the first time. We analyzed the effects of shallow-trench isolation on ionizing …
presented for the first time. We analyzed the effects of shallow-trench isolation on ionizing …
Gate bias and length dependences of total ionizing dose effects in InGaAs FinFETs on bulk Si
We evaluate the total ionizing dose (TID) responses of InGaAs nMOS FinFETs with different
gate lengths irradiated with 10-keV X-rays under different gate biases. The largest …
gate lengths irradiated with 10-keV X-rays under different gate biases. The largest …
Impacts of through-silicon vias on total-ionizing-dose effects and low-frequency noise in FinFETs
Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in advanced bulk
nMOS and pMOS FinFETs with SiO 2/HfO 2 gate dielectrics. Otherwise identical devices …
nMOS and pMOS FinFETs with SiO 2/HfO 2 gate dielectrics. Otherwise identical devices …