Porous GaAs were formed by electrochemical etching of n-type GaAs (1 0 0) substrates
implanted by iron ion beam with energy of 2 MeV at low ion fluence of 7.8× 10+ 13 Fe++/cm …

We report about chemical, structural and optical characteristics of porous GaAs near-surface
layers formed by low energy and high fluence ion implantation of Si+ and Ge+ ions. The …

Mn ions were implanted into p-GaAs: Zn substrates at room temperature. Post-annealing
was performed using 350keV He+ ion irradiation at a temperature of 150–250° C. The …

A technical approach is proposed for the synthesis of thin porous PGe layers with Ag
nanoparticles based on low-energy high-dose implantation of single-crystal c-Ge metal ions …

Abstract Semi-insulating (100) oriented GaAs was irradiated with 250 keV Xe+ ions with
different fluences. The native oxide layers formed in the air after implantation are …

The article presents a simple and cheap method to form a porous structure of Ga 2 O 3/GaAs
on the surface of monocrystalline gallium arsenide. It is shown that two-stage etching in the …

Porous GaAs layers have been prepared by electrochemical etching of p+-type GaAs (10 0)
surfaces in two different solutions; HCl: H 2 O 2: H 2 O (HF free electrolyte) and HCl: H 2 O 2 …

The chemical composition of an oxide on the GaAs surface implanted with Xe and Ar ions at
various doses was studied by x-ray-photoelectron spectroscopy (XPS). It was found that only …

The influence of Ar+ and Ba+ ion implantation on the composition and structure of GaAs
films is considered in this work. Information about the density distribution of the electronic …

We have performed a detailed characterization study of electrochemically etched p-type
GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …