Effect of voided germanium thin-films grown onto silicon substrate on dislocations evolution
High-quality germanium (Ge) epilayers on silicon (Si) with low threading dislocation density
were achieved by sintering of porous Si/Ge films. The process consists of the formation of …
were achieved by sintering of porous Si/Ge films. The process consists of the formation of …
Ultra-Low Dislocation Ge on Silicon Virtual Substrate: New Insights from Crystal Plasticity Simulations
Abstract By sintering porous Si/Ge films, researchers were able to create high-quality
germanium (Ge) epilayers on silicon (Si) with low threading dislocation density. The …
germanium (Ge) epilayers on silicon (Si) with low threading dislocation density. The …
Defects Engineering in Heteroepitaxial Growth of Ge-on-Si: Porous Germanium-based Virtual Substrates for High-Efficiency Photovoltaic Devices
YA Bioud - 2018 - hal.science
Today's photovoltaics market is dominated by silicon-based technology, as it is inexpensive
and mature. Solar cells (SCs) based on III-V compound semiconductors have attained the …
and mature. Solar cells (SCs) based on III-V compound semiconductors have attained the …
Effect of sintering germanium epilayers on dislocation dynamics: From theory to experimental observation
High-quality germanium epilayers on Si with low threading-dislocation density were
achieved by sintering of porous Ge/Si films. The process consists in the formation of porous …
achieved by sintering of porous Ge/Si films. The process consists in the formation of porous …
Defect-free, heteroepitaxy through electrochemical etching of germanium for multijunction solar cells applications
A low-cost method to reduce the threading dislocations density (TDD) in relaxed germanium
(Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si substrate was treated with …
(Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si substrate was treated with …
Voided Ge/Si Platform to Integrate III-V Materials on Si
High-quality germanium epilayers on Si with low threadingdislocation densities are
achieved by self-assembling nanovoids inside the Ge layer. This consists on the formation of …
achieved by self-assembling nanovoids inside the Ge layer. This consists on the formation of …
A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon
III-V solar cell cost reduction and direct III-V/Si integration can both be realized by depositing
a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …
a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …
Trapping threading dislocations in germanium trenches on silicon wafer
We show that Ge epilayers on Si substrates with trenches filled by Ge at a different
temperature have very low threading dislocation density compared to blanket Ge epilayers …
temperature have very low threading dislocation density compared to blanket Ge epilayers …
Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon
The use promising group III-V materials for photovoltaic applications is hindered by the high
density of threading dislocations when integrated with silicon technology. Here, we present …
density of threading dislocations when integrated with silicon technology. Here, we present …
Capturing the Effects of Free Surfaces on Threading Dislocation Density Reduction
The big concern with using silicon as a substrate for making Ge and III-V devices is the
dislocation density in the epilayers. Dislocations degrade device performance by trapping …
dislocation density in the epilayers. Dislocations degrade device performance by trapping …