Abstract By sintering porous Si/Ge films, researchers were able to create high-quality germanium (Ge) epilayers on silicon (Si) with low threading dislocation density. The …
Today's photovoltaics market is dominated by silicon-based technology, as it is inexpensive and mature. Solar cells (SCs) based on III-V compound semiconductors have attained the …
High-quality germanium epilayers on Si with low threading-dislocation density were achieved by sintering of porous Ge/Si films. The process consists in the formation of porous …
A low-cost method to reduce the threading dislocations density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si substrate was treated with …
YA Bioud, A Boucherif, M Myronov… - ECS …, 2019 - iopscience.iop.org
High-quality germanium epilayers on Si with low threadingdislocation densities are achieved by self-assembling nanovoids inside the Ge layer. This consists on the formation of …
III-V solar cell cost reduction and direct III-V/Si integration can both be realized by depositing a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …
X Zhao, RT Wen, B Albert, J Michel - Journal of Crystal Growth, 2020 - Elsevier
We show that Ge epilayers on Si substrates with trenches filled by Ge at a different temperature have very low threading dislocation density compared to blanket Ge epilayers …
The use promising group III-V materials for photovoltaic applications is hindered by the high density of threading dislocations when integrated with silicon technology. Here, we present …
The big concern with using silicon as a substrate for making Ge and III-V devices is the dislocation density in the epilayers. Dislocations degrade device performance by trapping …