Forksheet FETs with bottom dielectric isolation, self-aligned gate cut, and isolation between adjacent source-drain structures

H Mertens, R Ritzenthaler, Y Oniki… - 2022 International …, 2022 - ieeexplore.ieee.org
We report on forksheet field-effect transistors that are isolated from the substrate by bottom
dielectric isolation (BDI) formed by replacing a SiGe epitaxial layer with a dielectric film while …
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[引用][C] Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures

H Mertens, R Ritzenthaler, Y Oniki, PP Gowda… - 2022 - imec-publications.be
We report on forksheet field-effect transistors that are isolated from the substrate by bottom
dielectric isolation (BDI) formed by replacing a SiGe epitaxial layer with a dielectric film while …