[HTML][HTML] A review of the gate-all-around nanosheet FET process opportunities
S Mukesh, J Zhang - Electronics, 2022 - mdpi.com
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …
are reviewed. These innovations span enablement of multiple threshold voltages and …
A Review of the Gate-All-Around Nanosheet FET Process Opportunities
S Mukesh, J Zhang - Electronics (Switzerland), 2022 - research.ibm.com
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …
are reviewed. These innovations span enablement of multiple threshold voltages and …
A Review of the Gate-All-Around Nanosheet FET Process Opportunities.
S Mukesh, J Zhang - Electronics (2079-9292), 2022 - search.ebscohost.com
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …
are reviewed. These innovations span enablement of multiple threshold voltages and …
A Review of the Gate-All-Around Nanosheet FET Process Opportunities
S Mukesh, J Zhang - Electronics, 2022 - search.proquest.com
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …
are reviewed. These innovations span enablement of multiple threshold voltages and …