In this work, the double cell electrochemical etching technique is employed to study the
evolution of surface morphology during the etching of p-type gallium arsenide (GaAs) in a …

Properties of Ga2O3 thin films deposited by electron‐beam evaporation from a high‐purity
single‐crystal Gd3Ga5O12 source are reported. As‐deposited Ga2O3 films are amorphous …

Selective etching of GaAs in the H., SOI-H, _, O2-H., O system was studied as a pretreatment
to selective deposition. Flat-bottomed holes were obtained in low H2SO4 solutions, whereas …

GaAs when exposed to a 7 V anodic bias in aqueous HCl, forms pitted structures from which
visible photoluminescence has been observed. Previous work in our laboratory identified …

Abstract Red LEDs based on Eu: Ga 2 O 3/GaAs heterojunctions were fabricated using a
pulsed laser deposition method. Eu-related luminescence originating from the 5 D 0–7 F 2 …

Intense 1.53 μm electroluminescence (EL) is achieved from metal-oxide-semiconductor light-
emitting devices based on Er-doped Ga 2 O 3 (Ga 2 O 3: Er) nanofilms fabricated by atomic …

We have performed a detailed characterization study of electrochemically etched p-type
GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …

We have fabricated the europium (Eu) doped Ga 2 O 3 thin films on GaAs substrate by using
pulsed laser deposition. The impact of Eu contents on structure, surface morphology, and …

In this study, a two-step surface treatment process combined with pulsed laser deposition
(PLD) was developed for obtaining high quality Ga 2 O 3 epi-layers with atomic flat interface …

This paper reports the formation of self-organized nanoporous gallium oxide by anodization
of solid gallium metal. Because of its low melting point (ca. 30° C), metallic gallium can be …