We demonstrate how the formation of octahedral microcrystals of arsenic oxide As2O3 in the
form of arsenolite with a size of 200 nm to 10 μm can be initiated by the electrochemical …

In this work, the double cell electrochemical etching technique is employed to study the
evolution of surface morphology during the etching of p-type gallium arsenide (GaAs) in a …

Detailed information on GaAs oxide properties is important for solving the problem of
passivating and dielectric layers in the GaAs-based electronics. The elemental and chemical …

The article presents a simple and cheap method to form a porous structure of Ga 2 O 3/GaAs
on the surface of monocrystalline gallium arsenide. It is shown that two-stage etching in the …

Poor dielectric properties of GaAs oxides are the drawback of the GaAs-based electronics
preventing using these oxides as dielectric layers. The elemental and chemical …

The anodic oxidation of GaAs is a technologically simple and a low temperature process
enabling the production of reproducible high-quality native oxides on GaAs. The paper …

Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-
containing solutions. Crystallographic etching of the sample is a precursor stage of the …

Electrochemical treatment of crystalline GaAs in 1 M HCl results in the formationof porous
GaAs. As a by-product of the electrochemical dissolution process, small transparent crystals …

GaAs when exposed to a 7 V anodic bias in aqueous HCl, forms pitted structures from which
visible photoluminescence has been observed. Previous work in our laboratory identified …

We report on the fabrication of porous GaAs (100) using three different acids, H2SO4, HF,
and HCl, diluted in DMF based solutions. The mixture of H2SO4 with DMF showed the best …