Self-heating effects (SHEs) of multi-nanosheet FET (mNS-FET) at the 3-nm technology node
were analyzed at the device and circuit level considering the introduction of punchthrough …

In vertically stacked gate-all-around Nanosheet FET (NSFET), the channels/sheets are
wrapped by a low thermal conductivity material, which hinders the active heat flow path and …

Self-heating effect (SHE) is a severe issue in advanced nano-scaled devices such as
stacked nanosheet field-effect transistors (NS-FET), which raises the device temperature …

In this paper, self-heating effects (SHEs) in three-stacked nanoplate FETs were investigated
through the TCAD simulation. In order to obtain high reliability, the evaluation of SHEs was …

Self-heating-induced thermal degradation is a severe issue in nonplanar MOS architectures.
Especially in stacked gate-all-around (GAA) nanosheet FET (NSFET), the self-heating effect …

Self-heating effect (SHE) is a severe issue arising in the nanoscale field-effect transistors
(FETs). It raises the device's lattice temperature several degrees higher than the ambient …

This work comprehensively investigates the self-heating effects (SHEs) in Tree-FET at 5nm
technological nodes. A comparative analysis of Tree-FET with Nanosheet FET (NSFET) …

This article reports that Hetero-interfacial-thermal resistance (HITR) due to phonon
scattering and weak electron-phonon coupling at hetero-interfaces, can impact stacked Si …

This article critically reviews the fabrication challenges, emerging materials (wafer, high-k
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …

In this article, we investigate the electro-thermal (ET) performance of stacked Si gate-all-
around (GAA) nanosheet FET (NSHFET) by adopting the metal (M0) source/drain (S/D) …