A review of the gate-all-around nanosheet FET process opportunities
S Mukesh, J Zhang - Electronics, 2022 - mdpi.com
In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …
are reviewed. These innovations span enablement of multiple threshold voltages and …
Performance and design considerations for gate-all-around stacked-NanoWires FETs
S Barraud, V Lapras, B Previtali… - 2017 IEEE …, 2017 - ieeexplore.ieee.org
This paper presents recent progress on Gate-All-Around (GAA) stacked-NanoWire
(NW)/NanoSheet (NS) MOSFETs. Key technological challenges will be discussed and …
(NW)/NanoSheet (NS) MOSFETs. Key technological challenges will be discussed and …
Design study of gate-all-around vertically stacked nanosheet FETs for sub-7nm nodes
Vertically stacked horizontal nanosheet gate-all-around transistors seem to be one of the
viable solutions toward scaling down below sub-7nm technology nodes. In this work, we …
viable solutions toward scaling down below sub-7nm technology nodes. In this work, we …
Design and analysis of gate stack silicon-on-insulator nanosheet FET for low power applications
Since the introduction of fast integrated circuits, semiconductor manufacturers have
concentrated their efforts on reducing the size of transistors. Increased working frequencies …
concentrated their efforts on reducing the size of transistors. Increased working frequencies …
Design optimization techniques in nanosheet transistor for RF applications
Nanosheet gate-all-around transistors are analyzed for RF applications using calibrated
TCAD simulations. The effects of stack spacing and number of stacks on device performance …
TCAD simulations. The effects of stack spacing and number of stacks on device performance …
Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET
By using technology computer aided design (TCAD) simulation, the aim of this paper is to
investigate the effect of Si parasitic channel, which is placed under stacked nanosheet …
investigate the effect of Si parasitic channel, which is placed under stacked nanosheet …
Benchmarking of FinFET, nanosheet, and nanowire FET architectures for future technology nodes
Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (LG) of 16 nm
and below are benchmarked against equivalent FinFETs. The device performance is …
and below are benchmarked against equivalent FinFETs. The device performance is …
Investigation of electrical characteristic behavior induced by channel-release process in stacked nanosheet gate-all-around MOSFETs
In this brief, several issues attributed to the channel-release process in vertically stacked-
gate-all-around MOSFETs (GAAFETs) having various nanosheet (NS) widths were …
gate-all-around MOSFETs (GAAFETs) having various nanosheet (NS) widths were …
Punch-through-stopper free nanosheet FETs with crescent inner-spacer and isolated source/drain
Structural modifications of 5-nm node nanosheet FETs (NSFETs) were quantitatively
analyzed using fully calibrated TCAD. The NSFETs with crescent inner spacer improve the …
analyzed using fully calibrated TCAD. The NSFETs with crescent inner spacer improve the …
Device exploration of nanosheet transistors for sub-7-nm technology node
D Jang, D Yakimets, G Eneman… - … on Electron Devices, 2017 - ieeexplore.ieee.org
In this paper, lateral gate-all-around nano-sheet transistors (NSH-FETs) are explored from
intrinsic performance to dc and ring oscillator (RO) benchmark compared with FinFETs and …
intrinsic performance to dc and ring oscillator (RO) benchmark compared with FinFETs and …