In this work, a new buried oxide nanosheet field-effect transistor (BO-NSFET) structure is
proposed for the first time as a strategy for improving the leakage of 3-nm stacked nanosheet …

Recently, nanosheet FETs (NS FETs) have been introduced as promising candidates for
beyond 3-nm node technology. However, difficulties remain for mass production of the NS …

The optimal inner spacer length () for each layer in nanosheet (NS) field-effect transistors
(FETs) was investigated using a technology computer-aided design (TCAD) simulation …

The recently proposed stacked nanosheet-field-effect transistor (SNSH-FET) is considered
as a promising candidate for continued scaling with silicon. While using punchthrough …

While considering the low power demand as a fundamental bottleneck for nanoscale
devices, this work comprehensively investigates a novel concept that incorporates the area …

A novel and feasible trench inner-spacer (TIS) scheme to eliminate undesired parasitic
bottom transistors (trpbt) in gate-all-around (GAA) nanosheet (NS) field-effect transistors …

For continued scaling with silicon, the stacked nanosheet field-effect transistor (SNSH-FET)
is considered to be a major candidate for sub-7-nm technology. The radiofrequency …

Structural modifications of 5-nm node nanosheet FETs (NSFETs) were quantitatively
analyzed using fully calibrated TCAD. The NSFETs with crescent inner spacer improve the …

By using technology computer aided design (TCAD) simulation, the aim of this paper is to
investigate the effect of Si parasitic channel, which is placed under stacked nanosheet …

Nanosheet field-effect transistors (NS FETs) are a promising candidate for extremely scaled
logic devices beyond FinFETs. The benefits of NS FETs include superior design flexibility …