Fabrication and characterisation of nitride DBRs and nitride membranes by electrochemical etching techniques

Y Tian - 2022 - etheses.whiterose.ac.uk
A Distributed Bragg Reflector (DBR) is an important component for semiconductor
microcavities and optoelectronic devices, such as vertical cavity surface emitting lasers …

High reflectance membrane-based distributed Bragg reflectors for GaN photonics

D Chen, J Han - Applied Physics Letters, 2012 - pubs.aip.org
Preparation of highly reflective distributed Bragg reflectors (DBRs) from III-nitrides is an
important building block for cavity photonics. In this work, we report the fabrication of a …

Development of highly reflective mirrors for III-nitrides from green to UV

JH Kang, R ElAfandy, J Han - Gallium Nitride Materials and …, 2021 - spiedigitallibrary.org
GaN-based vertical-cavity surface emitting lasers (VCSELs) have attracted significant
attention in recent years for their potential applications in solid-state lighting, optical …

Development of blue vertical cavity surface emitting lasers (VCSELs) with nanoporous GaN

J Han, R Elafandy, J Kang - ECS Transactions, 2021 - iopscience.iop.org
Blue and green vertical cavity surface emitting lasers (VCSELs) are expected to be used in
future generation display and lighting applications. Applications in virtual reality (VR) …

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

SM Mishkat-Ul-Masabih, AA Aragon… - … and Devices XV, 2020 - spiedigitallibrary.org
GaN-based vertical-cavity surface-emitting lasers (VCSELs) have drawn interest in recent
years for their potential applications in data storage, laser printing, solid-state lighting …

Distributed Bragg reflectors for GaN-based vertical-cavity surface-emitting lasers

C Zhang, R ElAfandy, J Han - Applied Sciences, 2019 - mdpi.com
Featured Application GaN based vertical-cavity surface-emitting lasers. Abstract A
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …

Surfactant Effects of Indium on the Growth of AlN/GaN Distributed Bragg Reflectors Via Metal Organic Vapor Phase Epitaxy

LE Rodak, CM Miller, D Korakakis - MRS Online Proceedings Library …, 2009 - cambridge.org
Distributed Bragg Reflectors (DBRs) remain critical to the fabrication of various nitride based
optoelectronic devices. In particular, DBRs are often employed for cavity formation in …

Preparation of large-area, high quality, free-standing GaN distributed Bragg reflectors

J Liu, Y Yu, X Yang, R Chen, C Luan, F Jiang, H Xiao - Materials Letters, 2022 - Elsevier
In this paper, we propose a strategy for the preparation of large-area, high quality, free-
standing nanoporous (NP) GaN distributed Bragg reflector (DBR) membranes via …

Tunable nanostructured distributed Bragg reflectors for III-nitride optoelectronic applications

B Wei, Y Han, Y Wang, H Zhao, B Sun, X Yang, L Han… - RSC …, 2020 - pubs.rsc.org
Highly reflective and conductive distributed Bragg reflectors (DBRs) are the key for high-
performance III-nitride optoelectronic devices, such as vertical cavity surface emitting lasers …

Effect of In as surfactant on the growth of AlN/GaN Distributed Bragg Reflectors by Metal Organic Vapor Phase Epitaxy

LE Rodak, D Korakakis - MRS Online Proceedings Library (OPL), 2008 - cambridge.org
Nitride based Distributed Bragg Reflectors (DBRs) have several important applications in
current nitride based optoelectronic devices. DBRs can be implemented in resonant cavity …