This paper proposes a simplified fabrication processing for nanosheet Field-Effect
Transistors (FETs) part of beyond-3-nm node technology. Formation of the ground plane …

In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET
are reviewed. These innovations span enablement of multiple threshold voltages and …

Nanosheet FETs (NSFETs) are attracting attention as promising devices that can replace
FinFETs beyond the 5-nm node. Despite the importance of the devices, few studies analyze …

Improved functionality and performance in integrated circuits has principally been achieved
by shrinking transistors and squeezing more of them onto each square inch of silicon. As …

Stacked horizontal Gate All Around Nanosheet transistors were recently proposed as a
replacement of FinFET for the sub-7nm device nodes. In order to stack Nanosheet channels …

Nanosheet gate-all-around transistor devices have been an important contenders for future
technology nodes. Compared to FinFETs they have superior electrostatic control. The …

Structural modifications of 5-nm node nanosheet FETs (NSFETs) were quantitatively
analyzed using fully calibrated TCAD. The NSFETs with crescent inner spacer improve the …

The optimal inner spacer length () for each layer in nanosheet (NS) field-effect transistors
(FETs) was investigated using a technology computer-aided design (TCAD) simulation …

We presented and demonstrated both n-and p-type vertical C-shaped-channel nanosheet
field-effect transistors (VCNFETs) featured with precise control of both channel thickness …

For continued scaling with silicon, the stacked nanosheet field-effect transistor (SNSH-FET)
is considered to be a major candidate for sub-7-nm technology. The radiofrequency …