A novel and feasible trench inner-spacer (TIS) scheme to eliminate undesired parasitic
bottom transistors (trpbt) in gate-all-around (GAA) nanosheet (NS) field-effect transistors …

A new approach of narrowing sub-fin with little extra process cost for suppressing parasitic-
channel-effect (PCE) on vertically-stacked horizontal gate-all-around (GAA) Si nanosheet …

Recently, nanosheet FETs (NS FETs) have been introduced as promising candidates for
beyond 3-nm node technology. However, difficulties remain for mass production of the NS …

The optimal inner spacer length () for each layer in nanosheet (NS) field-effect transistors
(FETs) was investigated using a technology computer-aided design (TCAD) simulation …

Structural modifications of 5-nm node nanosheet FETs (NSFETs) were quantitatively
analyzed using fully calibrated TCAD. The NSFETs with crescent inner spacer improve the …

In this work, a new buried oxide nanosheet field-effect transistor (BO-NSFET) structure is
proposed for the first time as a strategy for improving the leakage of 3-nm stacked nanosheet …

The inner spacer thickness (TIS) variations in sub-3-nm, node 3-stacked, nanosheet field-
effect transistors (NSFETs) were investigated using computer-aided design simulation …

Nanosheet field-effect transistors (NS FETs) are a promising candidate for extremely scaled
logic devices beyond FinFETs. The benefits of NS FETs include superior design flexibility …

This study examines the effect of leakage current reduction techniques on the performance
of the nanosheet FETs (NS-FETs) at 3 nm and beyond. We study the effects of the …

In this brief, we computationally examine electrical characteristics of stacked gate-all-around
Si nanosheet MOSFETs (GAA NS-FETs) with and without metal sidewall (MSW) …