This article critically reviews the fabrication challenges, emerging materials (wafer, high-k
oxide, gate metal, channel materials), dimensional influences, thermal effects, growth …

This manuscript demonstrates the performance comparison of vertically stacked nanosheet
FET with various high-k materials in gate stack (GS) configuration. As the high-k dielectric …

To meet the scaling targets and continue with Moore's Law, the transition from FinFET to
Gate-All-Around (GAA) nanosheet Field Effect Transistors (FETs) is the necessity for low …

In vertically stacked gate-all-around Nanosheet FET (NSFET), the channels/sheets are
wrapped by a low thermal conductivity material, which hinders the active heat flow path and …

Abstract The Nanosheet Field Effect Transistor (NSFET) has been shown to be a viable
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …

In this article, FinFET, vertically stacked gate-all-around (GAA) nanowire (NW), and
nanosheet (NS) FETs performance are estimated with equal effective channel widths () at …

Incessant downscaling of feature size of multi-gate devices such as FinFETs and gate-all-
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …

Abstract The Nanosheet FET (NS FET) has proven to be a potential candidate for sub-5-nm
nodes. For the first time, in this manuscript, the NS FET performance is demonstrated by …

Internal and external process variations severely affect the device threshold voltage (V_th)
and, in turn, the device's reliability. For the first time, this paper presented a thorough …

In this paper, the impact of scaling on the gate all around the nanosheet field effect transistor
(GAA NSFET) is assessed in detail at sub-5-nm nodes for digital and analog/RF …