The results of the study of the structure of gallium arsenide wafers and porous layers GaAs
by high-resolution X-ray diffraction (XRD) are discussed. The wafers GaAs were previously …

The properties of porous GaAs samples produced by the electrochemical etching of single-
crystal n-GaAs (100) wafers are studied by X-ray diffraction analysis, electron microscopy …

We investigated structural perfection of porous gallium arsenide layers formed in GaAs
(001). Different modes of electrochemical etching of n-type GaAs (001) substrates in fluoride …

The paper presents the results of structural and photoluminescent (PL) studies of porous
GaAs layers created by electrochemical etching of GaAs wafers. Structural and …

The article presents a simple and cheap method to form a porous structure of Ga 2 O 3/GaAs
on the surface of monocrystalline gallium arsenide. It is shown that two-stage etching in the …

The surface morphology and structure parameters of the surface layers of the single-crystal
GaAs (001) wafers subjected to He+ ion implantation (E= 300 keV, D= 10 16 atoms/cm 2) …

[en] The influence of γ-radiation on structural changes in transistor multilayer
AlGaAs/InGaAs/GaAs heterostructures has been investigated by X-ray diffraction and …

A method of microalloying of semiconductor near the surface layers by hydrogen ions using
plasma-beam discharge is suggested. Spectral study of the high-voltage plasma-beam …

The synthesis and characterization of heterostructure por-Ga< sub> 2 O< sub> 3/GaAs
represent a crucial advancement in nanomaterials, particularly in optoelectronic …

Porous GaAs layers have been produced by electrochemical anodic etching of n-GaAs. The
results of researches of optical characteristics of low sized structures of porous gallium …