[HTML][HTML] Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node
D Wang, X Sun, T Liu, K Chen, J Yang, C Wu, M Xu… - Electronics, 2023 - mdpi.com
Impacts of source/drain (S/D) recess engineering on the device performance of both the gate-
all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been …
all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been …
Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node
D Wang, X Sun, T Liu, K Chen, J Yang, C Wu… - …, 2023 - search.proquest.com
Impacts of source/drain (S/D) recess engineering on the device performance of both the gate-
all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been …
all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been …
Investigation of Source/Drain Recess Engineering and Its Impacts on FinFET and GAA Nanosheet FET at 5 nm Node.
D Wang, X Sun, T Liu, K Chen, J Yang… - Electronics (2079 …, 2023 - search.ebscohost.com
Impacts of source/drain (S/D) recess engineering on the device performance of both the gate-
all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been …
all-around (GAA) nanosheet (NS) field-effect transistor (FET) and FinFET have been …