Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications

J Zhang, X Miao, C Adams, H Wu… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
In this paper, full bottom dielectric isolation (BDI) is first demonstrated on horizontally
stacked Nanosheet device structures with Lmetal 12 nm. The comparison of full BDI scheme …
被引用次数：68 相关文章
[PDF] researchgate.net

[PDF][PDF] Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega… - researchgate.net
In this paper, full bottom dielectric isolation (BDI) is first demonstrated on horizontally
stacked Nanosheet device structures with Lmetal 12 nm. The comparison of full BDI scheme …

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

J Zhang, J Frougier, A Greene, X Mao… - IEEE International …, 2019 - research.ibm.com
In this paper, full bottom dielectric isolation (BDI) is first demonstrated on horizontally
stacked Nanosheet device structures with Lmetal 12 nm. The comparison of full BDI scheme …