Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs
We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-
oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive …
oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive …
Introduction: Bias temperature instability (BTI) in N and P channel MOSFETs
In this chapter, the basic experimental signatures of NBTI and PBTI degradation respectively
in p-and n-channel MOSFETs are discussed. Historical results from published reports are …
in p-and n-channel MOSFETs are discussed. Historical results from published reports are …
Implications of negative bias temperature instability in power MOS transistors
D Danković, I Manić, S Djorić-Veljković… - Micro Electronic and …, 2009 - books.google.com
As the device dimensions in metal-oxide-silicon (MOS) technologies have been
continuously scaled down, a phenomenon called negative bias temperature instability …
continuously scaled down, a phenomenon called negative bias temperature instability …
A detailed study of gate insulator process dependence of NBTI using a compact model
K Joshi, S Mukhopadhyay, N Goel… - … on Electron Devices, 2014 - ieeexplore.ieee.org
Process impact of negative bias temperature instability (NBTI) is studied in silicon oxynitride
(SiON) and high-k metal gate (HKMG) p-MOSFETs. An analytical compact model is used to …
(SiON) and high-k metal gate (HKMG) p-MOSFETs. An analytical compact model is used to …
Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET
DS Ang, S Wang, CH Ling - IEEE electron device letters, 2005 - ieeexplore.ieee.org
A detailed investigation of the negative-bias temperature instability (NBTI) of the ultrathin
nitrided gate p-MOSFET over a wide temperature range reveals two different activation …
nitrided gate p-MOSFET over a wide temperature range reveals two different activation …
Negative bias temperature instability: What do we understand?
DK Schroder - Microelectronics Reliability, 2007 - Elsevier
We present a brief overview of negative bias temperature instability (NBTI) commonly
observed for in p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) …
observed for in p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) …
Time-dependent degradation due to negative bias temperature instability of p-MOSFET with an ultra-thin SiON gate dielectric
SU Han, HS Kang, BK Kang - Microelectronic engineering, 2006 - Elsevier
This paper presents the time-dependence of the negative bias temperature instability (NBTI)
degradation of p-MOSFETs with an ultra-thin silicon oxynitride gate dielectric. The …
degradation of p-MOSFETs with an ultra-thin silicon oxynitride gate dielectric. The …
Influence of nitrogen on negative bias temperature instability in ultrathin SiON
Y Mitani, H Satake, A Toriumi - IEEE transactions on device …, 2008 - ieeexplore.ieee.org
Negative bias temperature instability (NBTI) and its recovery phenomenon in ultrathin silicon
oxynitride (SiON 2) films were investigated. To discuss the influence of nitrogen …
oxynitride (SiON 2) films were investigated. To discuss the influence of nitrogen …
Impact of nitrogen on negative bias temperature instability in p-channel MOSFETs
M Houssa, C Parthasarathy, N Espreux… - … and solid-state …, 2003 - iopscience.iop.org
Negative bias temperature instability (NBTI) in p-channel metal-oxide-semiconductor field-
effect transistors (MOSFETs) with ultrathin oxynitride layers is investigated. The degradation …
effect transistors (MOSFETs) with ultrathin oxynitride layers is investigated. The degradation …
Negligible effect of process-induced strain on intrinsic NBTI behavior
A Shickova, B Kaczer, P Verheyen… - IEEE electron device …, 2007 - ieeexplore.ieee.org
In this letter, we investigate the effects of process-induced strain on negative bias
temperature instability (NBTI) by performing a comparative study of devices with and without …
temperature instability (NBTI) by performing a comparative study of devices with and without …