Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a
wide range of gate and drain voltages (V gs and V ds, respectively). Special attention is paid …
wide range of gate and drain voltages (V gs and V ds, respectively). Special attention is paid …
On The Contribution of Secondary Holes in Hot-Carrier Degradation–a Compact Physics Modeling Perspective
SE Tyaginov, E Bury, A Grill, Z Yu… - 2023 7th IEEE …, 2023 - ieeexplore.ieee.org
We extend our compact physics model for hot-carrier degradation (HCD) by implementing
the contribution to damage caused by the secondary carriers (generated by impact …
the contribution to damage caused by the secondary carriers (generated by impact …
Hot-carrier degradation in decananometer CMOS nodes: From an energy-driven to a unified current degradation modeling by a multiple-carrier degradation process
A Bravaix, V Huard, F Cacho, X Federspiel… - Hot Carrier Degradation …, 2015 - Springer
As the operating temperature increases, the tradeoff between performance and reliability
becomes tricky as the classical hot-carrier (HC) picture has to be modified into the energy …
becomes tricky as the classical hot-carrier (HC) picture has to be modified into the energy …
An analytical model for hot carrier degradation in nanoscale CMOS suitable for the simulation of degradation in analog IC applications
Channel hot carrier (CHC) degradation is one of the major reliability concerns for nanoscale
transistors. To simulate the impact of CHC on analog circuits, a unified analytical model able …
transistors. To simulate the impact of CHC on analog circuits, a unified analytical model able …
Predictive hot-carrier modeling of n-channel MOSFETs
We present a physics-based hot-carrier degradation (HCD) model and validate it against
measurement data on SiON n-channel MOSFETs of various channel lengths, from …
measurement data on SiON n-channel MOSFETs of various channel lengths, from …
An analytical approach for physical modeling of hot-carrier induced degradation
S Tyaginov, I Starkov, H Enichlmair… - Microelectronics …, 2011 - Elsevier
We develop an analytical model for hot-carrier degradation based on a rigorous physics-
based TCAD model. The model employs an analytical approximation of the carrier …
based TCAD model. The model employs an analytical approximation of the carrier …
Physics-based hot-carrier degradation modeling
SE Tyaginov, I Starkov, H Enichlmair, JM Park… - ECS …, 2011 - iopscience.iop.org
We present a thorough analysis of physics-based hot-carrier degradation (HCD) models. We
discuss the main features of HCD such as its strong localization at the drain side of the …
discuss the main features of HCD such as its strong localization at the drain side of the …
Physics-based modeling of hot-carrier degradation
S Tyaginov - Hot carrier degradation in semiconductor devices, 2014 - Springer
We present and verify a physics-based model of hot-carrier degradation (HCD). This model
is based on a thorough solution of the Boltzmann transport equation. Such a solution can be …
is based on a thorough solution of the Boltzmann transport equation. Such a solution can be …
Simulation of the hot‐carrier degradation in short channel transistors with high‐K dielectric
The degradation produced by channel hot‐carrier (CHC) on short channel transistors with
high‐k dielectric has been analyzed. For short channel transistors (L< 0.15 µm), the most …
high‐k dielectric has been analyzed. For short channel transistors (L< 0.15 µm), the most …
Competing degradation mechanisms in short-channel transistors under channel hot-carrier stress at elevated temperatures
The temperature dependence of channel hot-carrier (CHC) degradation in n-MOS
transistors with high-k dielectrics has been studied. The analysis starts from the most …
transistors with high-k dielectrics has been studied. The analysis starts from the most …