NS-GAAFET compact modeling: technological challenges in Sub-3-nm circuit performance
NanoSheet-Gate-All-Around-FETs (NS-GAAFETs) are commonly recognized as the future
technology to push the digital node scaling into the sub-3 nm range. NS-GAAFETs are …
technology to push the digital node scaling into the sub-3 nm range. NS-GAAFETs are …
Nanosheet-GAAFETs modeling and circuit performance evaluation
M Amato - 2021 - webthesis.biblio.polito.it
During the last decade, three-dimensional electronic devices, known as Fin field-effect
transistors (FinFETs), have been developed to pursue continuous technology scaling, by …
transistors (FinFETs), have been developed to pursue continuous technology scaling, by …
11 Challenges and future scope of gate-all-around (GAA) transistors
S Srivastava, A Acharya - Device Circuit Co-Design Issues in …, 2023 - books.google.com
No doubt, FinFET technology is the slogger of today's semiconductor world. But as demand
for further scaling with a desire for ultra-low-power and high-speed applications results in …
for further scaling with a desire for ultra-low-power and high-speed applications results in …
Challenges and future scope of gate-all-around (GAA) transistors: Physical insights of device-circuit interactions
S Srivastava, A Acharya - Device Circuit Co-Design Issues in FETs, 2024 - taylorfrancis.com
Undoubtedly, FinFET technology is the slogger of today's semiconductor world. However,
the demand for further scaling with a desire for ultra-low-power and high-speed applications …
the demand for further scaling with a desire for ultra-low-power and high-speed applications …
Gate-All-Around FETs: nanowire and nanosheet structure
DC/AC performances of 3-nm-node gate-all-around (GAA) FETs having different widths and
the number of channels (Nch) from 1 to 5 were investigated thoroughly using fully-calibrated …
the number of channels (Nch) from 1 to 5 were investigated thoroughly using fully-calibrated …
Impact of high‐κ gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor
High‐κ gate‐all‐around structure counters the Short Channel Effect (SCEs) mostly providing
excellent off‐state performance, whereas high mobility III–V channel ensures better on‐state …
excellent off‐state performance, whereas high mobility III–V channel ensures better on‐state …
From FinFET to Nanosheet Si-SiGe GAAFET: fabrication process simulation and analysis
M Pelosi - 2021 - webthesis.biblio.polito.it
The field-effect transistors are one of the building blocks of modern electronics. In the last 50
years, transistor technology had a noticeable development. According to Moore's law, the …
years, transistor technology had a noticeable development. According to Moore's law, the …
Parasitic capacitance model for stacked gate-all-around nanosheet FETs
Gate-all-around (GAA) nanosheet field-effect transistors (NSFETs) are hailed as the most
promising architecture for the incessant scaling of MOSFETs to the sub-5-nm technology …
promising architecture for the incessant scaling of MOSFETs to the sub-5-nm technology …
Investigation of electrically gate-all-around hexagonal nanowire FET (HexFET) architecture for 5 nm node logic and SRAM applications
This work investigates, in detail, the electrically gate-all-around (eGAA) Hexagonal NW FET
(HexFET) which combines the high current drive of FinFETs with the excellent electrostatic …
(HexFET) which combines the high current drive of FinFETs with the excellent electrostatic …
Optimization and benchmarking FinFETs and GAA nanosheet architectures at 3-nm technology node: Impact of unique boosters
Using a full design-technology cooptimization (DTCO) framework, we benchmark gate-all-
around (GAA) nanosheet (NS) FETs against FinFETs at 3-nm logic technology relevant …
around (GAA) nanosheet (NS) FETs against FinFETs at 3-nm logic technology relevant …