Memristors are becoming increasingly recognized as candidates for neuromorphic devices
due to their low power consumption, non-volatile memory, and synaptic properties and the …

Memristors are a promising option for achieving high-density storage and neuromorphic
computing. However, the high-bias electroforming step and the sneak current arises in the …

An oxide memristor device changes its internal state according to the history of the applied
voltage and current. The principle of resistive switching (RS) is based on ion transport (eg …

A memristor architecture based on metal-oxide materials would have great promise in
achieving exceptional energy efficiency and higher scalability in next-generation electronic …

The undesirable sneak current path is one of the key challenges in high-density memory
integration for the emerging cross-bar memristor arrays. This work demonstrates a new …

The theoretical and practical realization of memristive devices has been hailed as the next
step for nonvolatile memories, low-power remote sensing, and adaptive intelligent …

Memristors integrated into a crossbar‐array architecture (CAA) are promising candidates for
nonvolatile memory elements in artificial neural networks. However, the relatively low …

It is always a hot and difficult problem of how to realize multi-bit data storage by preparing
multi-resistance memristors by a simple process compatible with standard CMOS processes …

This paper reports the fabrication and characterization of a cerium dioxide (CeO2)-based
gated memristor with metal electrodes. The fabricated device exhibits memristive behavior …

Memristors integrated into a crossbar-array architecture (CAA) are promising candidates for
analog in-memory computing accelerators. However, the relatively low reliability of the …