This investigation explores the resistive switching and energy storage capabilities of 100 nm
yttria-stabilized zirconia (YSZ) thin films in a metal-oxide-semiconductor (MOS) …

For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …

Thin film solid-state batteries stand out as desired components to produce on-chip energy
storage, sometimes known as 'power on a chip'. Multilayer structures have been tried for this …

Nonvolatile memories using two-dimensional materials and high-k oxides have gained
attention for their potential to achieve robust analog switching, easy memristive device …

Nanostructured zirconia and gold films (ns-Au/ZrOx) have been demonstrated as devices
characterized by non-linear and hysteretic electrical behavior, with short-term memory and …

Electrically tunable resistive switching of a polycrystalline MoS2-based memtransistor has
attracted a great deal of attention as an essential synaptic component of neuromorphic …

Two dimensional (2D) layered materials have recently attracted significant research interest
owing to their unique physical and chemical properties for efficient electrochemical energy …

Diverse synaptic and neuronal functionalities often require different switching dynamics for
memristors. Here, we demonstrate an effective approach to modulating the switching …

Neuromorphic systems provide a potential solution for overcoming von Neumann bottleneck
and realizing computing with low energy consumption and latency. However, the …

Abstract Artificial Neural Networks (ANNs) have reshaped computing paradigms,
transcending traditional methods. Leveraging oxide-based bilayer RRAM memristors …