This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive)
effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or …

Nonlinearity is a crucial characteristic for implementing hardware security primitives or
neuromorphic computing systems. The main feature of all memristive devices is this …

Memristive devices are promising components for nanoelectronics with applications in
nonvolatile memory and storage, defect-tolerant circuitry, and neuromorphic computing …

A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique
non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully …

Resistive switching devices (also termed memristive devices or memristors) are two-terminal
nonlinear dynamic electronic devices that can have broad applications in the fields of …

In this chapter, the roles of interfaces and interfacial reactions on the resistive switching
behavior of oxide-based redox-type memristive (ReRAM) devices are discussed. Typical …

With the increasing demand for artificially intelligent hardware systems for brain-inspired in-
memory and neuromorphic computing, understanding the underlying mechanisms in the …

Structures composed of transition metal oxides can display a rich variety of electronic and
magnetic properties including superconductivity, multiferroic behavior, and colossal …

Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

The areal footprint of memristors is a key consideration in material‐based neuromorphic
computing and large‐scale architecture integration. Electronic transport in the most widely …