First-principles investigation of vacancies in LiTaO3
W He, X Gao, L Pang, D Wang, N Gao… - Journal of Physics …, 2016 - iopscience.iop.org
Formation energies of neutral and charged vacancies in lithium tantalate, as well as their
electronic states have been investigated through first-principles calculations. It is found out …
electronic states have been investigated through first-principles calculations. It is found out …
[HTML][HTML] Effect of heavy ions irradiation on LiTaO3 crystal
L Pang, M Cui, T Shen, X Gao, K Wei, P Tai, C Yao… - Results in Physics, 2021 - Elsevier
In this work, congruent LiTaO 3 crystals are irradiated by heavy ions Fe, Xe, and Bi
respectively at fluence range of 1× 10 12~ 2× 10 15 cm− 2. The effects of heavy ions …
respectively at fluence range of 1× 10 12~ 2× 10 15 cm− 2. The effects of heavy ions …
In-Situ Process and Simulation of High-Performance Piezoelectric-on-Silicon Substrate for SAW Sensor
R Ma, W Liu, X Sun, S Zhou - Frontiers in Materials, 2021 - frontiersin.org
This paper studied the manufacturing process of Piezoelectric-on-Silicon (POS) substrate
which integrates 128° Y–X Lithium niobate thin film and silicon wafer using Smart-Cut …
which integrates 128° Y–X Lithium niobate thin film and silicon wafer using Smart-Cut …
Ion Implantation Caused Defects and Their Effects on LiTaO3 Crystal Exfoliation
K Zhang, W Luo, X Zeng, S Huang, L Wan… - … status solidi (a), 2022 - Wiley Online Library
Counting on its remarkable electro‐optical, pyroelectric, and piezoelectric properties, lithium
tantalate (LT) has been applied in optical modulator, infrared sensors, and other devices. LT …
tantalate (LT) has been applied in optical modulator, infrared sensors, and other devices. LT …
Blistering and cracking of LiTaO3 single crystal under helium ion implantation
C Ma, F Lu, Y Ma - Applied Physics A, 2015 - Springer
Blistering and cracking in LiTaO 3 surface are investigated after 200-keV helium ion
implantation and subsequent post-implantation annealing. Rutherford backscattering …
implantation and subsequent post-implantation annealing. Rutherford backscattering …
Evolution of optical absorption and strain in LiTaO3 crystal implanted by energetic He-ion
LL Pang, ZG Wang, JR Sun, CF Yao, X Gao… - Nuclear Instruments and …, 2015 - Elsevier
Z-cut LiTaO 3 single crystal wafers were implanted at room temperature by 100–500 keV He-
ion, to fluences in the range from 1.0× 10 15 to 1.0× 10 17 ions/cm 2. The implanted samples …
ion, to fluences in the range from 1.0× 10 15 to 1.0× 10 17 ions/cm 2. The implanted samples …