High peak and average efficiency is an important feature of power amplifiers (PAs) for 5G
millimeter-wave communication. This article reviews the challenges of conventional …

We review the recent advances on the implementation of electronic circuits that operate in
the millimeter-wave (30–300 GHz) and terahertz (300–3000 GHz) frequency ranges. The …

This article presents a high-power wideband power amplifier (PA) with a four-way power-
combining technique for-band high-resolution radar. The power combiner is based on a two …

This paper presents a fully integrated one-stage three-stack Ka-band power amplifier (PA)
with neutralization technique in 65-nm CMOS process for 5G applications. A transformer …

Stacked-FET topology is analyzed to increase the output power of a power amplifier (PA) in
the millimeter-wave (mm-wave) band. In the mm-wave band, parasitic capacitances of the …

This article presents a V-band three-stage power amplifier (PA) fabricated in 65-nm CMOS
technology with remarkable performances of output power, efficiency, and power gain. A …

In this brief, A two-stage power amplifier (PA) with a four-way series-parallel power combiner
is presented for Ka-band applications. A compact power stage with optimized cascode …

This brief presents a 54–68 GHz two-stage power amplifier (PA) with linearity and efficiency
enhancement in a 40 nm CMOS process. The first stage adopts a current reuse cascaded …

Stacked MOS power amplifiers (PA) are commonly used in SOI nodes but also have the
potential to be realized in bulk CMOS nodes. In this paper they are analyzed in millimeter …

This paper presents two 55-nm CMOS power amplifiers (PAs) for W-band automotive radar
applications. To reduce the parasitic capacitance, inductance and resistance of large-sized …