Band parameters for III–V compound semiconductors and their alloys
We present a comprehensive, up-to-date compilation of band parameters for the
technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs …
technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs …
Material parameters of In1−xGaxAsyP1−y and related binaries
S Adachi - Journal of Applied Physics, 1982 - pubs.aip.org
Various models for calculation of physical parameters in compound alloys are discussed
and the results for In1− x Ga x As y P1− y quaternaries are presented. The model used is …
and the results for In1− x Ga x As y P1− y quaternaries are presented. The model used is …
On elastic relaxation and long wavelength microstructures in spinodally decomposed InxGa1−x.AsyP1−y epitaxial layers
MMJ Treacy, JM Gibson, A Howie - Philosophical Magazine A, 1985 - Taylor & Francis
The origin of the long-wavelength (100–300 nm) quasi-periodic microstructure observed in
transmission electron microscopy studies of spinodally decomposed In Ga1− x As y P1− y …
transmission electron microscopy studies of spinodally decomposed In Ga1− x As y P1− y …
The morphology and electrical properties of heteroepitaxial InAs prepared by MBE
RAA Kubiak, EHC Parker, S Newstead, JJ Harris - Applied Physics A, 1984 - Springer
An investigation of the growth of heteroepitaxial InAs by MBE is reported. The surface
morphology and electrical properties are shown to be critically dependent on growth …
morphology and electrical properties are shown to be critically dependent on growth …
Theoretical diagnostic and prediction of physical properties of quaternary InGaAsP compound using artificial neural networks optimized by the Levenberg Maquardt …
Abstract The quaternaries In_ 1-x Ga_ x As_ y P_ 1-y I n 1-x G ax A sy P 1-y are the main
promising elements for the fabrication of optoelectronic devices. The adjustment of their …
promising elements for the fabrication of optoelectronic devices. The adjustment of their …
High efficiency quadruple junction solar cells
R Bestam, A Aissat, JP Vilcot - Superlattices and Microstructures, 2016 - Elsevier
This work focuses on the modeling and optimization of a structure based on InGaP/InGaAs/
InGaAsN/Ge for photovoltaic. In this study we took into consideration the concentration effect …
InGaAsN/Ge for photovoltaic. In this study we took into consideration the concentration effect …
Heteroepitaxial growth of high mobility InAsP from the vapor phase
PJ Wang, BW Wessels - Applied physics letters, 1984 - pubs.aip.org
High quality InAsx p] _ x epitaxial layers were heteroepitaxially deposited on InP substrates
from the vapor phase using the hydride technique. For phosphorus rich alloys electron …
from the vapor phase using the hydride technique. For phosphorus rich alloys electron …
LPE Growth of In1-xGaxAs1-yPy with Narrow Photoluminescence Spectrum on GaAs (111) B Substrates
T Kato, T Matsumoto, T Ishida - Japanese Journal of Applied …, 1982 - iopscience.iop.org
The growth conditions of In 1-x Ga x As 1-y P y, layers on GaAs (111) B substrate and the
photoluminescence (PL) properties of these layers are described. The temperature …
photoluminescence (PL) properties of these layers are described. The temperature …
Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs
LJJ Tan, WM Soong, JPR David… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
The reverse-bias current-voltage characteristics of a series of Ga 1-x ln x N y As 1-y diodes
with bandgap of between 0.87 and 1.04 eV are reported. At low bias, diffusion and …
with bandgap of between 0.87 and 1.04 eV are reported. At low bias, diffusion and …
Diffusion of Cd in InP and In0. 53Ga0. 47As
S Aytac, A Schlachetzki - Journal of Crystal Growth, 1983 - Elsevier
Diffusion experiments of Cd in InP and InGaAs, lattice matched to InP, are reported. The
diffusion technique employed preserves the high-quality surface of the samples. Results on …
diffusion technique employed preserves the high-quality surface of the samples. Results on …