Abstract Strained-layer superlattices (SLSs), such as the material system InGaAs/GaAs, offer
one approach to optical waveguides. For such applications a knowledge of the way in which …

LPE growth of Ge-doped InGaAsP/InP by two-phase solution technique - ScienceDirect Skip to
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Ge doping of liquid phase epitaxial In0.53Ga0.47As - ScienceDirect Skip to main contentSkip
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На основе модели регулярного раствора определены спинодальные изотермы и
составы сосуществующих равновесных фаз при распаде твердых растворов GaxIn1 …

Germanium doping on InGaAsP epitaxial layers grown by liquid phase epitaxy produces n-
type conduction with a net distribution coefficient k Ge≈ 5× 10-3. Doping with germanium as …

Одно из важнейших свойств полупроводниковых приборов на основе арсенида галлия
их высокое быстродействие. При работе этих при-боров в высокочастотных …

In epitaxial growth of semiconductors both the substrate and epitaxial layer have a cubic
(sphalerite) structure. Various examinations of epitaxy show that generally discrete islands …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

Determination of the quantum efficiency of InGaAsP/InP double heterostructures from spontaneous
emission measurements Page 1 Soviet Journal of Quantum Electronics INTERNATIONAL …

Developed technology of obtaining layers with variable band gap by metalorganic vapor
phase epitaxy (MOCVD). Made structure graded-gap layer with a thickness of 0.5 microns …