BH Chin, AK Chin, MA Digiuseppe… - MRS Online …, 1982 - cambridge.org
In the liquid phase epitaxy on indium phosphide, the substrate, just prior to the growth of the first epitaxial layer, is commonly etched back with an indium melt to remove any …
SS Chandvankar, AK Srivastava, BM Arora… - MRS Online …, 1989 - Springer
Photoluminescence and Hall measurements are reported on Ge doped InGaAs layers lattice matched to InP. Ge doping of these samples results in highly compensated material, with the …
HR Dizaji, R Dhanasekaran - Journal of Materials Science: Materials in …, 1998 - Springer
Liquid phase epitaxial growth of In 1-x Ga x As y P 1-y, a well known quaternary compound semiconductor, has been studied systematically. A numerical simulation technique has been …
MD Roy, BR Nag, D Chattopadhyay - Appl. Phys. A, 1983 - researchgate.net
Monte-Carlo results on the velocity-field characteristics, ac diffusion-constant and thermal- noise voltages are presented for Ino. v65Gao. 235Aso. sP0. s at 300K. Recently available …
M Deb Roy, BR Nag, D Chattopadhyay - Applied Physics A, 1983 - Springer
Monte-Carlo results on the velocity-field characteristics, ac diffusion-constant and thermal- noise voltages are presented for In 0.765 Ga 0.235 As 0.5 P 0.5 at 300K. Recently available …
Germanium doping of InGaAsP epitaxial layers grown by liquid phase epitaxy produces n type conduction with a net distribution coefficient KGe∼ 5× 10-3. In addition, Ge doping …
Ortsaufgelöste Charakterisierung von Entmischungsphänomenen in GaxIn1-xAsyP1-y-Halbleiter-Heteroschichten im Raster-Transmissi Page 1 Ortsaufgelöste Charakterisierung von …