Optical investigation of InGaAsP/InP double heterostructure wafers
V Rakovics - 2010 International Conference on Advanced …, 2010 - ieeexplore.ieee.org
Complex and informative luminescent spectra have been obtained by using visible sources
for excitation of InGaAsP/InP double heterostructure diode wafers. The thin contact layer …
for excitation of InGaAsP/InP double heterostructure diode wafers. The thin contact layer …
Improved Meltback Procedures for Liquid-Phase-Epitaxial Growth of Planar and Buried Heterostructures
BH Chin, AK Chin, MA Digiuseppe… - MRS Online …, 1982 - cambridge.org
In the liquid phase epitaxy on indium phosphide, the substrate, just prior to the growth of the
first epitaxial layer, is commonly etched back with an indium melt to remove any …
first epitaxial layer, is commonly etched back with an indium melt to remove any …
Ge Related Deep Level Luminescence in InGaAs Lattice Matched to InP
SS Chandvankar, AK Srivastava, BM Arora… - MRS Online …, 1989 - Springer
Photoluminescence and Hall measurements are reported on Ge doped InGaAs layers lattice
matched to InP. Ge doping of these samples results in highly compensated material, with the …
matched to InP. Ge doping of these samples results in highly compensated material, with the …
Simulation studies of liquid phase epitaxial growth of In1-xGaxAsyP1-y
HR Dizaji, R Dhanasekaran - Journal of Materials Science: Materials in …, 1998 - Springer
Liquid phase epitaxial growth of In 1-x Ga x As y P 1-y, a well known quaternary compound
semiconductor, has been studied systematically. A numerical simulation technique has been …
semiconductor, has been studied systematically. A numerical simulation technique has been …
[PDF][PDF] High-Field Transport Properties of Ino. 76 5Gao. 2 3 5 Aso. 5Po. 5
MD Roy, BR Nag, D Chattopadhyay - Appl. Phys. A, 1983 - researchgate.net
Monte-Carlo results on the velocity-field characteristics, ac diffusion-constant and thermal-
noise voltages are presented for Ino. v65Gao. 235Aso. sP0. s at 300K. Recently available …
noise voltages are presented for Ino. v65Gao. 235Aso. sP0. s at 300K. Recently available …
High-field transport properties of In0.765Ga0.235As0.5P0.5
M Deb Roy, BR Nag, D Chattopadhyay - Applied Physics A, 1983 - Springer
Monte-Carlo results on the velocity-field characteristics, ac diffusion-constant and thermal-
noise voltages are presented for In 0.765 Ga 0.235 As 0.5 P 0.5 at 300K. Recently available …
noise voltages are presented for In 0.765 Ga 0.235 As 0.5 P 0.5 at 300K. Recently available …
Ge Related Defect-Complex Induced Luminescence in InGaAsP
BM Arora, S Chakravarty, SS Chandvankar… - MRS Online …, 1987 - cambridge.org
Germanium doping of InGaAsP epitaxial layers grown by liquid phase epitaxy produces n
type conduction with a net distribution coefficient KGe∼ 5× 10-3. In addition, Ge doping …
type conduction with a net distribution coefficient KGe∼ 5× 10-3. In addition, Ge doping …
[PDF][PDF] Ortsaufgelöste Charakterisierung von Entmischungsphänomenen in GaxIn1-xAsyP1-y-Halbleiter-Heteroschichten im Raster …
C Mendorf - 2001 - duepublico2.uni-due.de
Ortsaufgelöste Charakterisierung von Entmischungsphänomenen in GaxIn1-xAsyP1-y-Halbleiter-Heteroschichten
im Raster-Transmissi Page 1 Ortsaufgelöste Charakterisierung von …
im Raster-Transmissi Page 1 Ortsaufgelöste Charakterisierung von …
固溶体半導体の構造と物性
田井英男， 堀茂徳 - 日本金属学会会報, 1982 - jstage.jst.go.jp
て, 今 日のエレクトロニクス発展の主役であることは言うまでもないが, シ リコンやゲルマニウムなど
の元素半導体以外にいわゆる金属間化合物の中には, 半 導体としてシリコンの持っていない特徴を …
の元素半導体以外にいわゆる金属間化合物の中には, 半 導体としてシリコンの持っていない特徴を …
[引用][C] КОНТАКТНЫЕ ЯВЛЕНИЯ ПРИ ЖИДКОФАЗНОЙ ЭПИТАҚСИИ
Л ДОЛГИНОВ, Л ДРУЖИНИНА… - Izvestii︠a︡ …, 1984 - Kirjastus" Perioodika"