The focus of this study was to demonstrate the vapor-phase halogenation of Si (100) and
subsequently evaluate the inhibiting ability of the halogenated surfaces toward atomic layer …

Area-selective atomic layer deposition (AS-ALD) has drawn significant attention in the past
decade because of the potential applications in bottom-up processing, which enables …

Area-selective atomic layer deposition (AS-ALD) is a bottom-up materials synthesis process
that provides the opportunity to overcome challenges associated with current top-down …

Bottom-up synthesis based on site-selective atomic layer deposition is a powerful atomic-
scale processing approach to fabricate materials with desired functionalities. Typical …

Area-selective atomic layer deposition (ALD) has the potential to significantly improve
current fabrication approaches by introducing a bottom-up process in which robust and …

Area-selective atomic layer deposition (AS-ALD) on pre-defined areas is of crucial
importance nowadays in significantly reducing complexities associated with current top …

Research into the fabrication of polymer brushes for use in Area Selective Deposition (ASD)
is vital for the understanding of 'bottom up'lithographic techniques such as block copolymer …

Atomic layer deposition (ALD) of elemental antimony was achieved on hydrogen-terminated
silicon (H–Si) and SiO2/Si substrates using Sb (SiMe3) 3 and SbCl3 in the temperature …

In semiconductor device manufacturing, it is typically necessary to process devices
incorporating both Si 3 N 4 and SiO 2 with etching solutions. However, several commercially …

The semiconductor industry faces physical limitations due to its top-down manufacturing
processes. High cost of EUV equipment, time loss during tens or hundreds of …