We have developed a new scanning probe microscopy-based technique, scanning
differential spreading resistance microscopy (SDSRM), which enables the determination of …

Многие исследователи, использующие сканирующую зондовую микроскопию (СЗМ),
знакомы c историей открытия сканирующей туннельной микроскопии (СТМ), предтечи …

Scanning spreading resistance microscopy has found extensive use as a dopant-profiling
technique for silicon-based devices, and to a lesser extent for some III–V materials. Here we …

Nanotechnology implies the capability to build up tailored nanostructures and devices for
given functions by control at the atomic and molecular levels. Development of novel …

To obtain a better understanding of the damage annealing process and dopant defect
incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high …

The distribution of charge carriers inside the active region of a terahertz (THz) quantum
cascade laser (QCL) has been measured with scanning spreading resistance microscopy …

As CMOS is approaching the 22nm node, the importance of high-mobility materials such as
Ge and GaAs is rapidly increasing. For the timely development of these new technologies …

В последние десятилетия все больше интереса уделяется конструированию,
изготовлению и изучению свойств наноструктур–объектов, размеры которых лежат в …

The external performance of quantum optoelectronic devices is governed by the three-
dimensional profiles of electric potentials determined by the distribution of charge carriers …