Structure and electronic properties of InN and In-rich group III-nitride alloys
The experimental study of InN and In-rich InGaN by a number of structural, optical and
electrical methods is reviewed. Recent advances in thin film growth have produced single …
electrical methods is reviewed. Recent advances in thin film growth have produced single …
When group-III nitrides go infrared: New properties and perspectives
J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
[图书][B] Earth-abundant materials for solar cells: Cu2-II-IV-VI4 semiconductors
S Adachi - 2015 - books.google.com
Systematically describes the physical and materials properties of copper-based quaternary
chalcogenide semiconductor materials, enabling their potential for photovoltaic device …
chalcogenide semiconductor materials, enabling their potential for photovoltaic device …
Enhanced solar cell conversion efficiency of InGaN/GaN multiple quantum wells by piezo-phototronic effect
The piezo-phototronic effect is the tuning of piezoelectric polarization charges at the
interface to largely enhance the efficiency of optoelectronic processes related to carrier …
interface to largely enhance the efficiency of optoelectronic processes related to carrier …
Spatial mapping of efficiency of GaN/InGaN nanowire array solar cells using scanning photocurrent microscopy
GaN–InGaN core–shell nanowire array devices are characterized by spectrally resolved
scanning photocurrent microscopy (SPCM). The spatially resolved external quantum …
scanning photocurrent microscopy (SPCM). The spatially resolved external quantum …
Fabrication of composition-controlled MOCVD grown InxGa1-xN based MSM photodetectors
Abstract Metal Semiconductor Metal (MSM) photodetector devices based on metal organic
chemical vapour deposition grown InGaN/GaN heterostructures with Ni/Au contacts has …
chemical vapour deposition grown InGaN/GaN heterostructures with Ni/Au contacts has …
[HTML][HTML] Phonon dynamics and Urbach energy studies of MgZnO alloys
The Mg x Zn 1− x O alloy system is emerging as an environmentally friendly choice in
ultraviolet lighting and sensor technologies. Knowledge of defects which impact their optical …
ultraviolet lighting and sensor technologies. Knowledge of defects which impact their optical …
In 1− x Ga x N@ ZnO: a rationally designed and quantum dot integrated material for water splitting and solar harvesting applications
S Rajaambal, M Mapa, CS Gopinath - Dalton Transactions, 2014 - pubs.rsc.org
The highly desirable combination of the visible light absorption properties of In1− xGaxN
Quantum dots (QD) along with the multifunctionality of ZnO into a single integrated material …
Quantum dots (QD) along with the multifunctionality of ZnO into a single integrated material …
Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN
In this work, we have performed and analyzed a nanometric layer of In x Ga 1-x N to be used
on a photodetector by the high fluence low energy In+ ion implantation into GaN. Secondary …
on a photodetector by the high fluence low energy In+ ion implantation into GaN. Secondary …
Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation
350 nm and 550 nm thick InGaN/GaN bilayers were irradiated with different energies (from∼
82 to∼ 38 MeV) of xenon (129Xe) ions and different fluences of 1.2 GeV lead (208Pb) ions …
82 to∼ 38 MeV) of xenon (129Xe) ions and different fluences of 1.2 GeV lead (208Pb) ions …