The present paper estimates the performance of vertically developed double gate GaSb/Si
tunnel field-effect transistor (V-DGTFET) biosensor with source pocket. A commercially …

Recently, nanosheet FETs (NS FETs) have been introduced as promising candidates for
beyond 3-nm node technology. However, difficulties remain for mass production of the NS …

In fabricating advanced silicon (Si)-based metal–oxide semiconductors, the ability to inspect
dopant distribution in Si ultrathin films (tens of nm) is crucial for monitoring the amount of …

Abstract Nanosheet Field Effect Transistor (NSFET) has emerged as a promising candidate
to replace FinFET devices at sub-7nm technology nodes and for different SoC applications …

Thin film electronic devices have been attracting more and more attention because of their
applications in many industry fields, such as in flat panel displays (FPDs), energy devices …

Nanosheet field-effect transistors (NS FETs) are a promising candidate for extremely scaled
logic devices beyond FinFETs. The benefits of NS FETs include superior design flexibility …

The decoupled-plasma nitridation treatment process is an effective recipe for repairing the
trap issues when depositing high-k gate dielectric. Because of this effect, electrical …

A novel and practicable partial punch-through-stopper (p-PTS) scheme beneath the gate
area is proposed for the substrate leakage current suppression in the gate-all-around (GAA) …

Electro-thermal annealing (ETA) in a MOSFET utilizes Joule heating. The high-temperature
heat effectively cures gate dielectric damages induced by electrical stresses or ionizing …

Abstract The Gate All Around (GAA) Field Effect Transistor (FET) is a type of MOS (Metal
Oxide Semiconductor) device that circumvents the problem of the existing FinFET devices …