Advances in solid state device technology in the sixties established III–V materials as a new
class of semiconductors for high speed microwave and highly efficient optical devices …

Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial
layers of semiconductor crystals. Because it is inherently a slow growth process, extreme …

A new high-performance 1.3-μm InGaAsP semiconductor laser is described, in which
effective current confinement into the active region has been realized. A pnpn current …

A new sinusoidal oscillator configuration is proposed which employs op-amps as unity-gain
amplifiers. The proposed circuit offers independent single-element controls for adjusting the …

From Maxwell's equations we derive a simple and accurate algorithm which can determine
the propagation constants of the modes of cylindrical dielectric waveguides of arbitrary …

An all-optical remote sensing system utilizing 5-20-km-long, low-loss silica optical fiber links
has been developed for the real-time detection of combustible, explosive, and toxic gases in …

BH laser devices with efficient optical and current confinement have been grown using a
new all-MOVPE growth technique. The devices produced operated with CW threshold …

Publisher Summary This chapter reviews the basic molecular beam epitaxy (MBE) process,
the growth apparatus, the various in situ surface diagnostic techniques, the III–V …

Mushroom stripe (MS) InGaAsP/InP and InGaAs/InP lasers have been realized emitting at λ=
1.3, 1.54, and 1.66 μm, respectively. The main advantage of these MS lasers is their …

The facet oxidation of InGaAsP/InP and InGaAs/InP lasers is investigated after aging under
high constant optical output power or high current stress. Facet oxidation in InGaAsP/InP …