InAsSb-based photodetectors
EH Steenbergen - Mid-infrared Optoelectronics, 2020 - Elsevier
InAs 1–x Sb x has the smallest bandgap of conventional III-V ternary alloys and thus has
been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 …
been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 …
Strain-balanced InAs/InAs1− xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates
EH Steenbergen, K Nunna, L Ouyang… - Journal of Vacuum …, 2012 - pubs.aip.org
Strain-balanced InAs/InAs 1− x Sb x type-II superlattices (SLs) on GaSb substrates with
0.27≤ x≤ 0.33 were grown by molecular beam epitaxy and demonstrated …
0.27≤ x≤ 0.33 were grown by molecular beam epitaxy and demonstrated …
Study of the valence band offsets between InAs and InAs1-xSbx alloys
EH Steenbergen, OO Cellek… - Quantum Sensing …, 2012 - spiedigitallibrary.org
InAs/InAs 1-x Sb x strain-balanced superlattices (SLs) on GaSb are a viable alternative to
the well-studied InAs/Ga 1-x In x Sb SLs for mid-and long-wavelength infrared (MWIR and …
the well-studied InAs/Ga 1-x In x Sb SLs for mid-and long-wavelength infrared (MWIR and …
Properties of mid-IR diodes with n-InAsSbP/n-InAs interface
BA Matveev, AV Ankudinov, NV Zotova… - … and Simulation of …, 2010 - spiedigitallibrary.org
IR imaging (2D radiation mapping) of forward biased point contact LEDs based on p-
InAsSbP/n-InAs/n-InAsSbP DHs and p-InAsSbP/n-InAs SHs revealed differences in current …
InAsSbP/n-InAs/n-InAsSbP DHs and p-InAsSbP/n-InAs SHs revealed differences in current …
The spin–orbit splitting band in InGaAsSb alloys lattice-matched to InAs
We report on the mid-infrared optical spectroscopy of quaternary InGaAsSb solid solution
systems lattice-matched to InAs (0 0 1) substrate. Fourier-transformed photoreflectance has …
systems lattice-matched to InAs (0 0 1) substrate. Fourier-transformed photoreflectance has …
Optical Properties of Strain‐balanced InAs/InAs 1‐x Sb x Type‐II Superlattices
Metalorganic chemical vapor deposition‐and molecular beam epitaxy‐grown strain‐
balanced InAs/InAs 1‐x Sb x type‐II superlattices with 20–100 periods and Sb composition …
balanced InAs/InAs 1‐x Sb x type‐II superlattices with 20–100 periods and Sb composition …
InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm
YC Lin, MH Mao, CJ Wu, HH Lin - Optics Letters, 2015 - opg.optica.org
The mid-infrared whispering-gallery-mode disk cavities with InAs_0. 85Sb_0. 15/InAs_0.
53P_0. 23Sb_0. 24 multiple quantum wells active medium on a GaSb substrate were …
53P_0. 23Sb_0. 24 multiple quantum wells active medium on a GaSb substrate were …
Double HBT With Weakly Type-II Base/Collector Junction
YC Chin, HH Lin, CH Huang - IEEE electron device letters, 2012 - ieeexplore.ieee.org
We report on the dc characteristics of an InGaP/GaAs 0.57 P 0.28 Sb 0.15/GaAs double
heterojunction bipolar transistor (DHBT). In comparison with control InGaP/GaAs single …
heterojunction bipolar transistor (DHBT). In comparison with control InGaP/GaAs single …
ОСОБЕННОСТИ ЭНЕРГЕТИЧЕСКОЙ СТРУКТУРЫ ЭПИТАКСИАЛЬНОГО СЛОЯ INASSBP ПРИ ОСАЖДЕНИИ НА ПОВЕРХНОСТЬ ТВЕРДОГО РАСТВОРА INAS …
ВВ РОМАНОВ, КД МОИСЕЕВ - ФИЗИКА ТВЕРДОГО ТЕЛА, 2023 - elibrary.ru
Узкозонные гетероструктуры InAs/InAsSbP/InAs 0.95 Sb 0.05/InAsSbP с различной
толщиной тройного твердого раствора были выращены методом газофазной …
толщиной тройного твердого раствора были выращены методом газофазной …