A novel S-gate-assisted SOI n-MOSFET for total ionizing dose radiation reinforcement
Y Liu, M Li, S Fang, Y Wang - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
In this article, a novel S-gate-assisted silicon-on-insulator n-channel metal–oxide–
semiconductor field-effect transistor (SGA SOI n-MOSFET) structure is proposed in order to …
semiconductor field-effect transistor (SGA SOI n-MOSFET) structure is proposed in order to …
Radiation hardening by design techniques for the mutual exclusion element
M Herrera, P Beerel - Proceedings of the Great Lakes Symposium on …, 2022 - dl.acm.org
Circuits in advanced CMOS technology are increasingly more sensitive to transient pulses
caused by radiation particles that strike vulnerable circuit components, specially turned off …
caused by radiation particles that strike vulnerable circuit components, specially turned off …
Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET
F Zhang, Y Wang, Y Liu, M Wu, Z Zhou - Electronics, 2023 - mdpi.com
As the manufacturing process level of semiconductor devices continues to improve, the
device size gradually decreases, and the devices are affected by the single event effect …
device size gradually decreases, and the devices are affected by the single event effect …
High Performance and Reliability Analysis of Implant Free Composite Channel In0.53Ga0.47As/InAs/In0.53Ga0.47As Delta-Doped MOSFET
A new approach for implementation of implant free In 0.53 Ga 0.47 As/InAs/In 0.53 Ga 0.47
As composite delta-doped stepped poly gate MOSFET is one of the challenging devices due …
As composite delta-doped stepped poly gate MOSFET is one of the challenging devices due …
Comparative Analysis of Single Event Transients in InGaAs-OI/Bulk/BOI FinFETs for SET-Tolerant InGaAs/Ge-OI Complementary FinFET Circuits
The III-V/Ge complementary-FinFET (C-FinFET) based integrated circuits are more
susceptible to radiation-induced single event transients (SET) than silicon counterparts. In …
susceptible to radiation-induced single event transients (SET) than silicon counterparts. In …
Sensitivity of SET pulse-width and propagation to radiation track parameters in CMOS inverter chain
KR Pasupathy, B Bindu - IETE Journal of Research, 2022 - Taylor & Francis
Single-event transient (SET) due to heavy-ion strike is a serious reliability concern for
devices operated in radiation environment. Due to technology scaling, nodal capacitance …
devices operated in radiation environment. Due to technology scaling, nodal capacitance …
Single Event Transient Effects in Raised Source/Drain Double-Gate 1-T DRAM
Single event transient (SET) due to heavy ion strike is a major reliability concern in digital
VLSI circuits. In this paper, the SET effects in a capacitorless 1-T DRAM with raised …
VLSI circuits. In this paper, the SET effects in a capacitorless 1-T DRAM with raised …
Influence of SET effects in low-doped double gate MOSFETs
This paper presents study of double gate (DG) MOSFET with the effect of single event
transient (SET). Heavy energized ion of 37.2 Linear energy transfer (LET) is strike on source …
transient (SET). Heavy energized ion of 37.2 Linear energy transfer (LET) is strike on source …
A Novel Double-Gate MOSFET Architecture as an Inverter
Aakansha, M Kumar - IETE Journal of Research, 2023 - Taylor & Francis
In this work, a novel structure of a double-gate MOSFET is proposed and simulated. The
CMOS inverter action in a single device realized by combining p-mode and n-mode MOS …
CMOS inverter action in a single device realized by combining p-mode and n-mode MOS …