M Herrera, P Beerel - Proceedings of the Great Lakes Symposium on …, 2022 - dl.acm.org
Circuits in advanced CMOS technology are increasingly more sensitive to transient pulses caused by radiation particles that strike vulnerable circuit components, specially turned off …
F Zhang, Y Wang, Y Liu, M Wu, Z Zhou - Electronics, 2023 - mdpi.com
As the manufacturing process level of semiconductor devices continues to improve, the device size gradually decreases, and the devices are affected by the single event effect …
A new approach for implementation of implant free In 0.53 Ga 0.47 As/InAs/In 0.53 Ga 0.47 As composite delta-doped stepped poly gate MOSFET is one of the challenging devices due …
YM Aneesh, B Bindu - IETE Journal of Research, 2023 - Taylor & Francis
The III-V/Ge complementary-FinFET (C-FinFET) based integrated circuits are more susceptible to radiation-induced single event transients (SET) than silicon counterparts. In …
Single-event transient (SET) due to heavy-ion strike is a serious reliability concern for devices operated in radiation environment. Due to technology scaling, nodal capacitance …
Single event transient (SET) due to heavy ion strike is a major reliability concern in digital VLSI circuits. In this paper, the SET effects in a capacitorless 1-T DRAM with raised …
This paper presents study of double gate (DG) MOSFET with the effect of single event transient (SET). Heavy energized ion of 37.2 Linear energy transfer (LET) is strike on source …
Aakansha, M Kumar - IETE Journal of Research, 2023 - Taylor & Francis
In this work, a novel structure of a double-gate MOSFET is proposed and simulated. The CMOS inverter action in a single device realized by combining p-mode and n-mode MOS …