[图书][B] Physics and applications of dilute nitrides
I Buyanova, W Chen - 2004 - books.google.com
Since their development in the 1990s, it has been discovered that diluted nitrides have
intriguing properties that are not only distinct from those of conventional semiconductor …
intriguing properties that are not only distinct from those of conventional semiconductor …
Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications
JS Harris Jr, R Kudrawiec, HB Yuen… - … status solidi (b), 2007 - Wiley Online Library
In the past few years, GaInNAsSb has been found to be a potentially superior material to
both GaInNAs and InGaAsP for communications wavelength laser applications. It has been …
both GaInNAs and InGaAsP for communications wavelength laser applications. It has been …
GaNP-based photovoltaic device integrated on Si substrate
Gallium phosphide is an important material in terms of III-V semiconductors integration on Si.
In this work we study photovoltaic properties of GaP: Be/GaNP (E g~ 2.0 eV)/GaP: Si pin …
In this work we study photovoltaic properties of GaP: Be/GaNP (E g~ 2.0 eV)/GaP: Si pin …
Negative Band Gaps in Dilute Alloys
A thin layer of InNSb has been fabricated by low energy nitrogen implantation in the near-
surface region of InSb. X-ray photoelectron spectroscopy indicates that nitrogen occupies∼ …
surface region of InSb. X-ray photoelectron spectroscopy indicates that nitrogen occupies∼ …
Energetics of quaternary III-V alloys described by incorporation and clustering of impurities
K Biswas, S Lany - Physical Review B—Condensed Matter and Materials …, 2009 - APS
The energetics of alloy formation is generally modeled either by explicit sampling of the
possible alloy configurations or by considering only noninteracting impurities in the dilute …
possible alloy configurations or by considering only noninteracting impurities in the dilute …
Growth of dilute GaNSb by plasma-assisted MBE
L Buckle, BR Bennett, S Jollands, TD Veal… - Journal of crystal …, 2005 - Elsevier
Using plasma-assisted molecular beam epitaxy (MBE), GaNxSb1− x films have been grown
onto GaSb and GaAs substrates over a range of growth temperatures (310–460° C). The …
onto GaSb and GaAs substrates over a range of growth temperatures (310–460° C). The …
Alloy composition and optoelectronic properties of dilute GaSb1− xNx by pseudo-potential calculations
A Gueddim, R Zerdoum, N Bouarissa - Physica B: Condensed Matter, 2007 - Elsevier
We present a theoretical study of the electronic structure and optical properties of zinc-
blende GaSb1− xNx semiconducting dilute alloys for small amounts of N (0⩽ x⩽ 0.05). Our …
blende GaSb1− xNx semiconducting dilute alloys for small amounts of N (0⩽ x⩽ 0.05). Our …
A theoretical investigation of ZnOx S1–x alloy band structure
We report the properties of ordered ZnOx S1–x alloys calculated in various structures (CuAu–
I, Cu3Au, Luzonite and Famatinite) using a first‐principles total‐energy formalism based on …
I, Cu3Au, Luzonite and Famatinite) using a first‐principles total‐energy formalism based on …
Electronic structure and optical properties of dilute InAs1− xNx: pseudopotential calculations
A Gueddim, N Bouarissa - Physica Scripta, 2009 - iopscience.iop.org
The energy band gaps, the electron and heavy hole effective masses and dielectric
constants of ternary dilute alloys InAs 1− x N x are calculated using the pseudopotential …
constants of ternary dilute alloys InAs 1− x N x are calculated using the pseudopotential …
Theoretical investigation of lattice-matched III-NV/Si double-junction solar cells
X Zhang, L Liu, F Chi, K Wang, K Lin… - Journal of Physics D …, 2022 - iopscience.iop.org
The lattice-matched III-NV/Si double-junction (DJ) solar cells are designed with GaNAsP and
GaInNP top cells, respectively. Under AM1. 5G condition, the efficiencies of III-NV/Si DJ cells …
GaInNP top cells, respectively. Under AM1. 5G condition, the efficiencies of III-NV/Si DJ cells …