Deep level transient spectroscopy (DLTS) was deployed to study the evolution, upon
electron irradiation and hydrogenation of GaAsN grown by chemical beam epitaxy, of the …

Starting on June 2011, NGCPV has been the first coordinated project between the European
Commission and Japanese NEDO in order to advance in the science and technology of …

The temperature dependence of capacitance–voltage (C–V) and current voltage (I–V)
characteristics were used to study the cause of high background doping and the underlying …

Deep-level defects were investigated by deep level transient spectroscopy on the as-grown
and annealed GaNAs layers of various nitrogen (N) contents. The unintentionally doped …

We report the highest mobility values above 2000 cm 2/Vs in Si doped GaNAs film grown by
molecular beam epitaxy. To understand the feature of the origin which limits the electron …

Highly mismatched alloys such as GaNAs demonstrate exotic electronic properties such as
the splitting of the conduction bands (CB) into E-and E+ sub-bands, and make them …

Current transport mechanisms were investigated in a GaAsN homojunction solar cell (HJSC)
grown by chemical beam epitaxy. At each temperature of measurement, the current-voltage …

The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A
toward [110] were characterized and discussed by using deep level transient spectroscopy …

Isochronal and isothermal annealing treatments were carried out on GaAsN films grown by
chemical beam epitaxy to clarify the evolution of a nonradiative recombination center, at an …

The properties of electron traps in GaAsN grown by chemical beam epitaxy on GaAs 311B
and GaAs 2AB substrate were studied and compared by deep level transient spectroscopy …