Data-driven science and technology offer transformative tools and methods to science. This
review article highlights the latest development and progress in the interdisciplinary field of …

Low-temperature plasma-processing technologies are essential for material synthesis and
device fabrication. Not only the utilization but also the development of plasma-related …

The mechanism for atomic layer etching (ALE) typically consists of two sequential self-
limited half-reactions—passivation and ion bombardment—which provide unique control …

Fabrication of semiconductor devices having three-dimensional (3D) structures places
unprecedented demands on plasma etching processes. Among these demands is the …

Plasma etching of thin films is essential for microelectronics manufacturing. With current
feature sizes of 35 nm in production and processes for smaller devices being developed, the …

Atomic-or nanometer-scale roughness on feature surfaces has become an important issue
to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases …

Feature profiles of Si etched in HBr-containing plasmas have been analyzed through a
comparison between experiments and simulations. The emphasis was placed on a …

Atomic-or nanometer-scale surface roughening and rippling during Si etching in high-
density Cl 2 and Cl 2/O 2 plasmas have been investigated by developing a three …

A three-dimensional atomic-scale cellular model (ASCeM-3D) has been developed to
reproduce the evolution of feature profiles on atomic or nanometer scale during plasma …

Plasma processes can present dicult control challenges due to time-varying dynamics and a
lack of relevant and/or regular measurements. Virtual metrology (VM) is the use of …