Facile Synthesis of Organic–Inorganic Hybrid Heterojunctions of Glycolated Conjugated Polymer‐TiO2−X for Efficient Photocatalytic Hydrogen Evolution

B Zhang, Z Genene, J Wang, D Wang, C Zhao, J Pan… - Small, 2024 - Wiley Online Library
The utilization of the organic–inorganic hybrid photocatalysts for water splitting has gained
significant attention due to their ability to combine the advantages of both materials and …

Electronic transitions induced by short-range structural order in amorphous

CA Triana, CM Araujo, R Ahuja, GA Niklasson… - Physical Review B, 2016 - APS
Several promising applications of amorphous titanium dioxide, a TiO 2, have appeared
recently, but the correlation between electronic properties and atomic short-range structural …

A modification of Chao's lower bound estimator in the case of one-inflation

D Böhning, P Kaskasamkul, PGM van der Heijden - Metrika, 2019 - Springer
For zero-truncated count data, as they typically arise in capture-recapture modelling, the
nonparametric lower bound estimator of Chao is a frequently used estimator of population …

In-situ XAFS and SERS study of self-healing of passive film on Ti in Hank's physiological solution

L Wang, H Yu, S Wang, L Qiao, D Sun - Applied Surface Science, 2019 - Elsevier
The self-healing of passive film on Ti after being damaged in Hank's physiological solution
greatly fluctuates with time and its mechanism has been investigated by in-situ X-ray …

Insights into the Unanticipated Chemical Reactivity of Functionalized Nanosheets Derived from TiB2

S Chakrabarty, K Jasuja - Inorganic Chemistry, 2023 - ACS Publications
Titanium diboride (TiB2) is a member of the AlB2-type layered metal boride family; the
materials of this family are receiving renewed research interest owing to their amenability to …

[HTML][HTML] Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy

A Kindsmüller, C Schmitz, C Wiemann, K Skaja… - APL materials, 2018 - pubs.aip.org
The switching mechanism of valence change resistive memory devices is widely accepted to
be an ionic movement of oxygen vacancies resulting in a valence change of the metal …

Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

S Kwon, MJ Kim, KB Chung - Scientific Reports, 2021 - nature.com
TiOx-based resistive switching devices have recently attracted attention as a promising
candidate for next-generation non-volatile memory devices. A number of studies have …

An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin

S Cortese, A Khiat, D Carta, ME Light… - Applied Physics …, 2016 - pubs.aip.org
Resistive random access memory (ReRAM) crossbar arrays have become one of the most
promising candidates for next-generation non volatile memories. To become a mature …

Nanometer–Thick Titanium Film as a Silicon Migration Barrier

SH Fawaeer, AQ Wala'M, V Sedlakova… - Materials Today …, 2024 - Elsevier
Diffusion of silicon atoms to the topmost film surface poses significant challenges in various
technological applications. In an effort to address this issue, titanium films with varying …

Structural properties and surface oxidation states of sputter‐deposited TiO2−x thin films

S Jana, AK Debnath, V Putta, J Bahadur… - Surface and …, 2021 - Wiley Online Library
Titanium dioxide (TiO2− x) films were deposited on silicon (100) substrates from pure
titanium (Ti) targets using direct current magnetron sputtering technique. TiO2− x thin films …