The explosive growth of compound semiconductors into the fields of electronic and optical
devices has been due to the development of advances epitaxial growth techniques. These …

Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive
review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and …

High purity, thin metal coatings have a variety of important commercial applications, for
example, in the microelectronics industry, as catalysts, as protective and decorative coatings …

Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of
semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state …

The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic
Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically …

The metalorganic chemical vapor deposition (MOCVD) process for electronic and photonic
compound semiconductor materials and devices is reviewed. We begin with an introduction …

The evolution of Si-based optoelectronics has been extremely fast in the last few years and it
is predicted that this growth will still continue in the near future. The aim of the volume is to …

Chemical beam epitaxy (CBE) is the newest development in epitaxial growth technology. It
combines many important advantages of molecular beam epitaxy (MBE) and organometallic …

We report the first successful room‐temperature GaInAsP‐InP double‐heterostructure laser
emitting at 1.27 μm, grown by low‐pressure metalorganic chemical vapor deposition on a Si …

Full widths at half-maximum intensity of the (004) Bragg reflecton peak as small as 24 arcs
are obtained from InGaAs epilayers 4-6/-lm thick. Such linewidth is the narrowest reported …