Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on
Ge| Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom …

Quantum confinements, especially quantum in narrow wells, have been investigated
because of their controllability over electrical parameters. For example, quantum dots can …

Abstract Epitaxial Ge-on-Si possesses a high density of threading dislocations (TDs) due to
the lattice mismatch and difference in thermal expansion coefficient. By employing the lattice …

We demonstrate a solar cell on reformed porous Ge with an efficiency of 7.7%. We generate
mesopores in (100) Ge by bipolar electrochemical etching and anneal them at high …

The effect of the passivation to etching duration ratio on the bipolar electrochemical etching
of highly p-doped germanium on its pore structures has been investigated. The final goal is …

The use of nanopatterned {111}-faceted v-grooves has recently shown promise for growing
high-quality III–V material on Si. Here, we study the effect of reactor conditions and surface …

Heteroepitaxy of III–V compound semiconductors on silicon (Si) or silicon-on-insulator (SOI)
substrates is of great interest for photonics and electronics applications. In this work …

Here, we study the morphology and dislocation dynamics of metalorganic vapor phase
epitaxy (MOVPE)-grown GaP on a V-groove Si substrate. We show that Si from the substrate …

A perfectly compliant substrate would allow the monolithic integration of high-quality
semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel …

The growth of high-quality compound semiconductor materials on silicon substrates has
long been studied to overcome the high price of compound semiconductor substrates. In this …