Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high
electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor …

An adaptive level-shift gate driver with indirect gate oxide health monitoring for suppressing
crosstalk of bridge-leg configured SiC mosfet s is proposed. This article firstly presents a …

In many industrial applications, parallel connection of power semiconductor switches is
widely used to achieve higher power levels and fault-tolerant operation. But there is a …

Due to the presence of parasitic elements in switching devices and circuit realization,
crosstalk phenomenon in bridge-leg configurations is unavoidable. A passive resonant level …

Turn-on loss is the dominant part of the switching loss for SiC MOSFET s in hard switching.
Reducing turn-on loss with conventional voltage source gate drives (VSGs) is difficult …

To understand the limitation of maximizing the switching speed of SiC low-current discrete
devices and high-current power modules in hard switching applications, double pulse tests …

Nowadays new silicon carbide (SiC) metal‐oxide‐semiconductor field‐effect transistors
(MOSFETs) are available in the market and they are expected to replace, in the next few …

The high temperature (HT) characteristics of silicon carbide (SiC) devices enable power
electronic converters to operate at higher ambient temperature, and the importance of HT …

Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as
higher breakdown voltage, faster action speed and better thermal conductivity. These …

SiC MOSFETs have become more and more popular in recent years. Apart from its superior
performance, attentions should be paid to its driving method. In this paper, an improved …