Several research groups have been actively pursuing antimonide-based electronic devices
in recent years. The advantage of narrow-bandgap Sb-based devices over conventional …

InP-based high electron mobility transistors (HEMTs) are potential candidates for sub-
millimeter wave and terahertz satellite communications due to their ultrahigh frequency …

The geometric structure, electronic and optical peculiarities of AlSb/CdSe heterojunction
were investigated based on the first principles computation of Density Functional Theory …

We present the results of a radiation damage experiment on \rmAl_\rmx\rmGa_1-
\rmx\rmN/GaN high electron mobility transistors. The basic mechanism underlying the …

We study molecular beam epitaxially grown undoped Al x Ga 1− x Sb/InAs/AlSb quantum
wells with different buffer and barrier designs and varying quantum well width. The highest …

This paper proposes a reasonable radiation-resistant composite channel structure for InP
HEMTs. The simulation results show that the composite channel structure has excellent …

The design, fabrication and performance of a prototype narrowband amplifier using InAs-
channel HEMTs are reported. The amplifier, which is realised on an RT/Duroid circuit board …

We describe the fabrication and magnetoelectric properties of robust, high sensitivity Hall
effect sensors fabricated using AlGaN/GaN and AlInSb/InAsSb/AlInSb heterostructures with …

In this study, the geometrical properties of AlSb/BAs heterojunction is calculated using the
first principles of Density Functional Theory (DFT). It is concluded that the H1 AlSb/BAs …

The geometric properties of undoped AlSb/InSe van der Waals Heterojunction (vdWH) and
As and Te doped AlSb/InSe vdWH are computed via Density Functional Theory (DFT). The …