Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

MZM Khan, TK Ng, BS Ooi - Progress in Quantum Electronics, 2014 - Elsevier
The advances in lasers, electronic and photonic integrated circuits (EPIC), optical
interconnects as well as the modulation techniques allow the present day society to …

Towards InAs/InP quantum-dash laser-based ultra-high capacity heterogeneous optical networks: A review

MZM Khan - IEEE Access, 2022 - ieeexplore.ieee.org
The unprecedented increase in internet traffic witnessed in the last few years has pushed
the community to explore heterogeneous optical networks, including free-space-optics …

Self-assembled quantum-dot superluminescent light-emitting diodes

ZY Zhang, RA Hogg, XQ Lv, ZG Wang - Advances in Optics and …, 2010 - opg.optica.org
The development of low-cost, compact, high-power and broadband superluminescent light-
emitting diodes is an important research subject for a wide range of applications. We …

Mode-locking and noise characteristics of InAs/InP quantum dash/dot lasers

G Liu, PJ Poole, Z Lu, J Liu, CY Song… - Journal of Lightwave …, 2023 - ieeexplore.ieee.org
The mode-locking and noise characteristics of InP/InAs quantum dash (QDash) and
quantum dot (QDot) multi-wavelength lasers, showing identical structural design, operating …

Quantum dashes on InP substrate for broadband emitter applications

BS Ooi, HS Djie, Y Wang, CL Tan… - IEEE Journal of …, 2008 - ieeexplore.ieee.org
We report on the development of InAs/InGaAlAs quantum-dash-in-well structure on InP
substrate for wideband emitter applications. A spectral width as broad as 58 meV observed …

Analysis of CMOS compatible Cu-based TM-pass optical polarizer

TK Ng, MZM Khan, A Al-Jabr… - IEEE Photonics …, 2012 - ieeexplore.ieee.org
A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-
oxide-semiconductor technology platform is proposed and analyzed using the 2-D method …

Highly ordered horizontal indium gallium arsenide/indium phosphide multi-quantum-well in wire structure on (001) silicon substrates

Y Han, Q Li, KM Lau - Journal of Applied Physics, 2016 - pubs.aip.org
We report the characteristics of indium gallium arsenide stacked quantum structures inside
planar indium phosphide nanowires grown on exact (001) silicon substrates. The …

Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission

MZM Khan, TK Ng, CS Lee, P Bhattacharya… - Applied Physics …, 2013 - pubs.aip.org
We report on the demonstration of 50 nm (full-width at half-maximum) broadband stimulated
emission from a chirped AlGaInAs barrier thickness multi-stack InAs/InP quantum dash …

Investigation of chirped InAs/InGaAlAs/InP quantum dash lasers as broadband emitters

MZM Khan, TK Ng, CS Lee… - IEEE Journal of …, 2013 - ieeexplore.ieee.org
In this paper, we assessed the effect of additionally broadened quantum dash (Qdash)
optical transitions in the multi-stack dash-in-a-well laser structure at both, material and …

Wavelength tuning and emission width widening of ultrabroad quantum dash interband laser

CL Tan, HS Djie, Y Wang, CE Dimas… - Applied Physics …, 2008 - pubs.aip.org
The authors report the demonstration of the bandgap-tuned InAs quantum dash broadband
laser with widened laser emission linewidth at room temperature using postgrowth …