We review and critique the recent developments on multifunctional oxide materials, which
are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this …

A technique is described for deposition of gold nanoparticles under vacuum, enabling
consistent energy referencing of X-ray photoelectron spectra obtained from lanthanum …

With scaling of the gate length downward to increase speed and density, the gate dielectric
thickness must also be reduced. However, this practice which has been in effect for many …

Thin films of cerium dioxide were deposited by atomic layer deposition (ALD). Temperature
ranges studied in detail were 175–375° C and 225–350° C for the Ce (thd) 4 and Ce (thd) …

High dielectric constant (κ) materials have become a necessity for down scaling of metal-
oxide-semiconductor (MOS) based devices. Rare-earth oxides have been studied as …

This paper addresses the resistive switching behavior in yttrium oxide based resistive
random access memory (RRAM)(TiN/yttrium oxide/Pt) devices. We report the coexistence of …

Thin films of ceria (CeO2) have many applications, and their synthesis by liquid-injection
MOCVD (metal–organic chemical vapor deposition) or ALD (atomic layer deposition) …

Rapid thermal annealing (RTA) with a short dwell time at maximum temperature is used with
ion implantation to form shallow junctions and polycrystalline-Si gate electrodes in …

This work highlights transmission electron diffraction (TED) for determining surface
structures and understanding the model perovskite system, SrTiO3, which has been …

In this paper, four heteroleptic Ce (III) complexes, including Ce (thd) 3-phen (thd= 2, 2, 6, 6-
tetramethyl-3, 5-heptanedione, phen= 1, 10—phenanthroline (1), Ce (thd) 3-MEDA (MEDA …