MF Sunding, K Hadidi, S Diplas, OM Løvvik… - Journal of Electron …, 2011 - Elsevier
A technique is described for deposition of gold nanoparticles under vacuum, enabling consistent energy referencing of X-ray photoelectron spectra obtained from lanthanum …
M Wu, YI Alivov, H Morkoç - Journal of Materials Science: Materials in …, 2008 - Springer
With scaling of the gate length downward to increase speed and density, the gate dielectric thickness must also be reduced. However, this practice which has been in effect for many …
J Päiväsaari, M Putkonen, L Niinistö - Journal of Materials Chemistry, 2002 - pubs.rsc.org
Thin films of cerium dioxide were deposited by atomic layer deposition (ALD). Temperature ranges studied in detail were 175–375° C and 225–350° C for the Ce (thd) 4 and Ce (thd) …
WC Chin, KY Cheong, Z Hassan - Materials science in semiconductor …, 2010 - Elsevier
High dielectric constant (κ) materials have become a necessity for down scaling of metal- oxide-semiconductor (MOS) based devices. Rare-earth oxides have been studied as …
This paper addresses the resistive switching behavior in yttrium oxide based resistive random access memory (RRAM)(TiN/yttrium oxide/Pt) devices. We report the coexistence of …
HC Aspinall, J Bacsa, AC Jones, JS Wrench… - Inorganic …, 2011 - ACS Publications
Thin films of ceria (CeO2) have many applications, and their synthesis by liquid-injection MOCVD (metal–organic chemical vapor deposition) or ALD (atomic layer deposition) …
AT Fiory - Journal of electronic materials, 2002 - Springer
Rapid thermal annealing (RTA) with a short dwell time at maximum temperature is used with ion implantation to form shallow junctions and polycrystalline-Si gate electrodes in …
DM Kienzle, LD Marks - CrystEngComm, 2012 - pubs.rsc.org
This work highlights transmission electron diffraction (TED) for determining surface structures and understanding the model perovskite system, SrTiO3, which has been …
W Zhao, H Zhou, J Li, Y Lu, Y Ding - Molecules, 2024 - mdpi.com
In this paper, four heteroleptic Ce (III) complexes, including Ce (thd) 3-phen (thd= 2, 2, 6, 6- tetramethyl-3, 5-heptanedione, phen= 1, 10—phenanthroline (1), Ce (thd) 3-MEDA (MEDA …