Understanding reduced-voltage operation in modern DRAM devices: Experimental characterization, analysis, and mechanisms

KK Chang, AG Yağlıkçı, S Ghose, A Agrawal… - Proceedings of the …, 2017 - dl.acm.org
The energy consumption of DRAM is a critical concern in modern computing systems.
Improvements in manufacturing process technology have allowed DRAM vendors to lower …

The DRAM latency PUF: Quickly evaluating physical unclonable functions by exploiting the latency-reliability tradeoff in modern commodity DRAM devices

JS Kim, M Patel, H Hassan… - 2018 IEEE International …, 2018 - ieeexplore.ieee.org
Physically Unclonable Functions (PUFs) are commonly used in cryptography to identify
devices based on the uniqueness of their physical microstructures. DRAM-based PUFs have …

Understanding rowhammer under reduced wordline voltage: An experimental study using real dram devices

AG Yağlıkçı, H Luo, GF De Oliviera… - 2022 52nd Annual …, 2022 - ieeexplore.ieee.org
RowHammer is a circuit-level DRAM vulnerability, where repeatedly activating and
precharging a DRAM row, and thus alternating the voltage of a row's wordline between low …

Figaro: Improving system performance via fine-grained in-dram data relocation and caching

Y Wang, L Orosa, X Peng, Y Guo… - 2020 53rd Annual …, 2020 - ieeexplore.ieee.org
Main memory, composed of DRAM, is a performance bottleneck for many applications, due
to the high DRAM access latency. In-DRAM caches work to mitigate this latency by …

Are we susceptible to rowhammer? an end-to-end methodology for cloud providers

L Cojocar, J Kim, M Patel, L Tsai… - … IEEE symposium on …, 2020 - ieeexplore.ieee.org
Cloud providers are concerned that Rowhammer poses a potentially critical threat to their
servers, yet today they lack a systematic way to test whether the DRAM used in their servers …

QUAC-TRNG: High-throughput true random number generation using quadruple row activation in commodity DRAM chips

A Olgun, M Patel, AG Yağlıkçı, H Luo… - 2021 ACM/IEEE 48th …, 2021 - ieeexplore.ieee.org
True random number generators (TRNG) sample random physical processes to create large
amounts of random numbers for various use cases, including security-critical cryptographic …

Improving 3D NAND flash memory lifetime by tolerating early retention loss and process variation

Y Luo, S Ghose, Y Cai, EF Haratsch… - Proceedings of the ACM on …, 2018 - dl.acm.org
Compared to planar (ie, two-dimensional) NAND flash memory, 3D NAND flash memory
uses a new flash cell design, and vertically stacks dozens of silicon layers in a single chip …

Benchmarking memory-centric computing systems: Analysis of real processing-in-memory hardware

J Gómez-Luna, I El Hajj, I Fernandez… - 2021 12th …, 2021 - ieeexplore.ieee.org
Many modern workloads such as neural network inference and graph processing are
fundamentally memory-bound. For such workloads, data movement between memory and …

In-memory low-cost bit-serial addition using commodity DRAM technology

MF Ali, A Jaiswal, K Roy - … on Circuits and Systems I: Regular …, 2019 - ieeexplore.ieee.org
In-memory computing architectures present a promising solution to address the memoryand
the power-wall challenges by mitigating the bottleneck between processing units and …

HiRA: Hidden row activation for reducing refresh latency of off-the-shelf DRAM chips

AG Yağlikçi, A Olgun, M Patel, H Luo… - 2022 55th IEEE/ACM …, 2022 - ieeexplore.ieee.org
DRAM is the building block of modern main memory systems. DRAM cells must be
periodically refreshed to prevent data loss. Refresh operations degrade system performance …