Dramscope: Uncovering dram microarchitecture and characteristics by issuing memory commands

H Nam, S Baek, M Wi, MJ Kim, J Park, C Song… - arXiv preprint arXiv …, 2024 - arxiv.org
The demand for precise information on DRAM microarchitectures and error characteristics
has surged, driven by the need to explore processing in memory, enhance reliability, and …

Amplifying Main Memory-Based Timing Covert and Side Channels using Processing-in-Memory Operations

K Kanellopoulos, F Bostanci, A Olgun… - arXiv preprint arXiv …, 2024 - arxiv.org
The adoption of processing-in-memory (PiM) architectures has been gaining momentum
because they provide high performance and low energy consumption by alleviating the data …

Enabling Effective Error Mitigation in Memory Chips That Use On-Die Error-Correcting Codes

M Patel - arXiv preprint arXiv:2204.10387, 2022 - arxiv.org
Improvements in main memory storage density are primarily driven by process technology
scaling, which negatively impacts reliability by exacerbating various circuit-level error …

Extending Memory Capacity in Modern Consumer Systems With Emerging Non-Volatile Memory: Experimental Analysis and Characterization Using the Intel Optane …

GF Oliveira, S Ghose, J Gómez-Luna… - IEEE …, 2023 - ieeexplore.ieee.org
DRAM scalability is becoming a limiting factor to the available memory capacity in consumer
devices. As a potential solution, manufacturers have introduced emerging non-volatile …

WoLFRaM: Enhancing wear-leveling and fault tolerance in resistive memories using programmable address decoders

L Yavits, L Orosa, S Mahar, JD Ferreira… - 2020 IEEE 38th …, 2020 - ieeexplore.ieee.org
Resistive memories have limited lifetime caused by limited write endurance and highly non-
uniform write access patterns. Two main techniques to mitigate endurance-related memory …

Sectored DRAM: An energy-efficient high-throughput and practical fine-grained DRAM architecture

A Olgun, F Bostanci, GF Oliveira, YC Tugrul… - arXiv preprint arXiv …, 2022 - arxiv.org
There are two major sources of inefficiency in computing systems that use modern DRAM
devices as main memory. First, due to coarse-grained data transfers (size of a cache block …

DRAM retention behavior with accelerated aging in commercial chips

MK Bepary, BMSB Talukder, MT Rahman - Applied Sciences, 2022 - mdpi.com
The cells in dynamic random access memory (DRAM) degrade over time as a result of
aging, leading to poor performance and potential security vulnerabilities. With a globalized …

Refresh triggered computation: Improving the energy efficiency of convolutional neural network accelerators

SMAH Jafri, H Hassan, A Hemani, O Mutlu - ACM Transactions on …, 2020 - dl.acm.org
To employ a Convolutional Neural Network (CNN) in an energy-constrained embedded
system, it is critical for the CNN implementation to be highly energy efficient. Many recent …

Architectural techniques for improving NAND flash memory reliability

Y Luo - arXiv preprint arXiv:1808.04016, 2018 - arxiv.org
Raw bit errors are common in NAND flash memory and will increase in the future. These
errors reduce flash reliability and limit the lifetime of a flash memory device. We aim to …

Understanding Read Disturbance in High Bandwidth Memory: An Experimental Analysis of Real HBM2 DRAM Chips

A Olgun, M Osseiran, AG Yaglikci, YC Tugrul… - arXiv preprint arXiv …, 2023 - arxiv.org
DRAM read disturbance is a significant and worsening safety, security, and reliability issue
of modern DRAM chips that can be exploited to break memory isolation. Two prominent …