The adoption of processing-in-memory (PiM) architectures has been gaining momentum because they provide high performance and low energy consumption by alleviating the data …
M Patel - arXiv preprint arXiv:2204.10387, 2022 - arxiv.org
Improvements in main memory storage density are primarily driven by process technology scaling, which negatively impacts reliability by exacerbating various circuit-level error …
DRAM scalability is becoming a limiting factor to the available memory capacity in consumer devices. As a potential solution, manufacturers have introduced emerging non-volatile …
Resistive memories have limited lifetime caused by limited write endurance and highly non- uniform write access patterns. Two main techniques to mitigate endurance-related memory …
There are two major sources of inefficiency in computing systems that use modern DRAM devices as main memory. First, due to coarse-grained data transfers (size of a cache block …
The cells in dynamic random access memory (DRAM) degrade over time as a result of aging, leading to poor performance and potential security vulnerabilities. With a globalized …
To employ a Convolutional Neural Network (CNN) in an energy-constrained embedded system, it is critical for the CNN implementation to be highly energy efficient. Many recent …
Y Luo - arXiv preprint arXiv:1808.04016, 2018 - arxiv.org
Raw bit errors are common in NAND flash memory and will increase in the future. These errors reduce flash reliability and limit the lifetime of a flash memory device. We aim to …
DRAM read disturbance is a significant and worsening safety, security, and reliability issue of modern DRAM chips that can be exploited to break memory isolation. Two prominent …