Negative capacitance FinFET with sub-20-mV/decade subthreshold slope and minimal hysteresis of 0.48 V
In this letter, an n-type short-channel negative capacitance FinFET (NC-FinFET) with a
hysteresis window of 0.48 V, an on-/off-current ratio of 10 7, and a sub-20-mV/decade …
hysteresis window of 0.48 V, an on-/off-current ratio of 10 7, and a sub-20-mV/decade …
[HTML][HTML] Electrostatically actuated nanobeam-based nanoelectromechanical switches–materials solutions and operational conditions
This review summarizes relevant research in the field of electrostatically actuated nanobeam-
based nanoelectromechanical (NEM) switches. The main switch architectures and structural …
based nanoelectromechanical (NEM) switches. The main switch architectures and structural …
Sub-60-mV/decade negative capacitance FinFET with sub-10-nm hafnium-based ferroelectric capacitor
The negative capacitance (NC) of ferroelectric materials has paved the way for achieving
sub-60-mV/decade switching feature in complementary metal-oxide-semiconductor (CMOS) …
sub-60-mV/decade switching feature in complementary metal-oxide-semiconductor (CMOS) …
Steep slope silicon-on-insulator feedback field-effect transistor: Design and performance analysis
Feedback field-effect transistor (FBFET), an alternative switching device, has received
attention due to its ideal steep switching feature. By utilizing the positive feedback …
attention due to its ideal steep switching feature. By utilizing the positive feedback …
Scaling limits of electrostatic nanorelays
C Pawashe, K Lin, KJ Kuhn - IEEE Transactions on Electron …, 2013 - ieeexplore.ieee.org
A model to explore the scaling limits of electrostatically actuated nanorelays is presented,
which shows that adhesion in a nanorelay's contact interface limits its performance with …
which shows that adhesion in a nanorelay's contact interface limits its performance with …
Monolithic three-dimensional 65-nm CMOS-nanoelectromechanical reconfigurable logic for sub-1.2-V operation
Monolithic three-dimensional (M3D) CMOS-nanoelectromechanical (CMOS-NEM)
reconfigurable logic (RL) circuits are experimentally demonstrated. This is the first …
reconfigurable logic (RL) circuits are experimentally demonstrated. This is the first …
Back-end-of-line nano-electro-mechanical switches for reconfigurable interconnects
Non-volatile (NV) nano-electro-mechanical (NEM) switches are successfully implemented
using multiple metallic layers in a standard 65 nm CMOS back-end-of-line (BEOL) process …
using multiple metallic layers in a standard 65 nm CMOS back-end-of-line (BEOL) process …
Toward monolithically integrated hybrid CMOS-NEM circuits
U Sikder, K Horace-Herron, TT Yen… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Nanoelectromechanical (NEM) switches offer the advantages of zero OFF-state leakage
current, abrupt switching characteristics, nonvolatile (NV) operation, and relatively low ON …
current, abrupt switching characteristics, nonvolatile (NV) operation, and relatively low ON …
Adjusting the operating voltage of an nanoelectromechanical relay using negative capacitance
The operating voltage of a nanoelectromechanical (NEM) relay can be scaled down
significantly using negative capacitance (NC), which is a unique property of ferroelectric …
significantly using negative capacitance (NC), which is a unique property of ferroelectric …
Three-dimensional integration of complementary metal-oxide-semiconductor-nanoelectromechanical hybrid reconfigurable circuits
WY Choi, YJ Kim - IEEE Electron Device Letters, 2015 - ieeexplore.ieee.org
Complementary-metal-oxide-semiconductor (CMOS) and nanoelectromechanical (NEM)
hybrid reconfigurable circuits are implemented for the first time using three-dimensional (3D) …
hybrid reconfigurable circuits are implemented for the first time using three-dimensional (3D) …